Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FF33MR12W1M1HB11BPSA1MOSFET Infineon Technologies |
5,421 |
|
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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DF14MR12W1M1HFB67BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
3,022 |
|
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | Chassis Mount | AG-EASY1B |
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FF11MR12W2M1HPB11BPSA1MOSFET 1200V Infineon Technologies |
5,406 |
|
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CoolSiC™ | - | Tray | Active | - | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | - | - |
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FF17MR12W1M1HPB11BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
5,863 |
|
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | Chassis Mount | AG-EASY1B |
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DF8MR12W1M1HFB67BPSA1MOSFET 2N-CH 1200V 45A AG-EASY1B Infineon Technologies |
3,408 |
|
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EasyPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 45A | 16.2mOhm @ 50A, 18V | 5.15V @ 20mA | 149nC @ 18V | 4400pF @ 800V | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY1B |
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FF17MR12W1M1HB70BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
5,456 |
|
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | Chassis Mount | AG-EASY1B |
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FF17MR12W1M1HB17BPSA1MOSFET 2N-CH 1200V 50A AG-EASY1B Infineon Technologies |
5,053 |
|
- |
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 50A (Tj) | 16.2mOhm @ 50A, 18V | 5.15V @ 20mA | 149nC @ 18V | 4400pF @ 800V | 20mW | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY1B |
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FF8MR12W1M1HB70BPSA1MOSFET Infineon Technologies |
5,321 |
|
![]() Datasheet |
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF7MR12W1M1HB17BPSA1MOSFET 2N-CH 1200V AG-EASY1B Infineon Technologies |
5,917 |
|
- |
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 105A (Tj) | 5.8mOhm @ 120A, 18V | 5.15V @ 56mA | 400nC @ 18V | 12100pF @ 800V | 20mW | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-EASY1B |
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FF6MR12W2M1HPB11BPSA1MOSFET 2N-CH 1200V 200A MODULE Infineon Technologies |
5,538 |
|
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HEXFET® | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 1200V (1.2kV) | 200A (Tj) | 5.63mOhm @ 200A, 15V | 5.55V @ 80mA | 496nC @ 15V | 14700pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |