Available 24/7 at SENICO ELECTRONICS INTL CO., LIMITED
    SENICO ELECTRONICS INTL CO., LIMITED

    FET, MOSFET Arrays

    Manufacturer Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































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    Photo Mfr. Part # Availability Price Quantity Datasheet RoHs Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    FF33MR12W1M1HB11BPSA1

    FF33MR12W1M1HB11BPSA1

    MOSFET

    Infineon Technologies

    5,421
    RFQ
    FF33MR12W1M1HB11BPSA1

    Datasheet

    FF33MR12W1M1HB11BPSA1 - - Tray Active - - - - - - - - - - - - - - -
    DF14MR12W1M1HFB67BPSA1

    DF14MR12W1M1HFB67BPSA1

    MOSFET 1200V AG-EASY1B

    Infineon Technologies

    3,022
    RFQ
    DF14MR12W1M1HFB67BPSA1

    Datasheet

    DF14MR12W1M1HFB67BPSA1 CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
    FF11MR12W2M1HPB11BPSA1

    FF11MR12W2M1HPB11BPSA1

    MOSFET 1200V

    Infineon Technologies

    5,406
    RFQ
    FF11MR12W2M1HPB11BPSA1

    Datasheet

    FF11MR12W2M1HPB11BPSA1 CoolSiC™ - Tray Active - - - 1200V (1.2kV) - - - - - - - - - - -
    FF17MR12W1M1HPB11BPSA1

    FF17MR12W1M1HPB11BPSA1

    MOSFET 1200V AG-EASY1B

    Infineon Technologies

    5,863
    RFQ
    FF17MR12W1M1HPB11BPSA1

    Datasheet

    FF17MR12W1M1HPB11BPSA1 CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
    DF8MR12W1M1HFB67BPSA1

    DF8MR12W1M1HFB67BPSA1

    MOSFET 2N-CH 1200V 45A AG-EASY1B

    Infineon Technologies

    3,408
    RFQ
    DF8MR12W1M1HFB67BPSA1

    Datasheet

    DF8MR12W1M1HFB67BPSA1 EasyPACK™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 45A 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V - -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
    FF17MR12W1M1HB70BPSA1

    FF17MR12W1M1HB70BPSA1

    MOSFET 1200V AG-EASY1B

    Infineon Technologies

    5,456
    RFQ
    FF17MR12W1M1HB70BPSA1

    Datasheet

    FF17MR12W1M1HB70BPSA1 CoolSiC™ Module Tray Active Silicon Carbide (SiC) - - 1200V (1.2kV) - - - - - - - - - Chassis Mount AG-EASY1B
    FF17MR12W1M1HB17BPSA1

    FF17MR12W1M1HB17BPSA1

    MOSFET 2N-CH 1200V 50A AG-EASY1B

    Infineon Technologies

    5,053
    RFQ

    -

    FF17MR12W1M1HB17BPSA1 CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 50A (Tj) 16.2mOhm @ 50A, 18V 5.15V @ 20mA 149nC @ 18V 4400pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
    FF8MR12W1M1HB70BPSA1

    FF8MR12W1M1HB70BPSA1

    MOSFET

    Infineon Technologies

    5,321
    RFQ
    FF8MR12W1M1HB70BPSA1

    Datasheet

    FF8MR12W1M1HB70BPSA1 - - Tray Active - - - - - - - - - - - - - - -
    FF7MR12W1M1HB17BPSA1

    FF7MR12W1M1HB17BPSA1

    MOSFET 2N-CH 1200V AG-EASY1B

    Infineon Technologies

    5,917
    RFQ

    -

    FF7MR12W1M1HB17BPSA1 CoolSiC™ Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 105A (Tj) 5.8mOhm @ 120A, 18V 5.15V @ 56mA 400nC @ 18V 12100pF @ 800V 20mW -40°C ~ 175°C (TJ) - - Chassis Mount AG-EASY1B
    FF6MR12W2M1HPB11BPSA1

    FF6MR12W2M1HPB11BPSA1

    MOSFET 2N-CH 1200V 200A MODULE

    Infineon Technologies

    5,538
    RFQ
    FF6MR12W2M1HPB11BPSA1

    Datasheet

    FF6MR12W2M1HPB11BPSA1 HEXFET® Module Tray Active Silicon Carbide (SiC) 2 N-Channel - 1200V (1.2kV) 200A (Tj) 5.63mOhm @ 200A, 15V 5.55V @ 80mA 496nC @ 15V 14700pF @ 800V - -40°C ~ 150°C (TJ) - - Chassis Mount Module
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