Available 24/7 at SENICO ELECTRONICS INTL CO., LIMITED
    SENICO ELECTRONICS INTL CO., LIMITED

    FET, MOSFET Arrays

    Manufacturer Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































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    Photo Mfr. Part # Availability Price Quantity Datasheet RoHs Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    UFB15C12E1BC3N

    UFB15C12E1BC3N

    MOSFET 4P-CH 1200V 24A MODULE

    Qorvo

    4,829
    RFQ
    UFB15C12E1BC3N

    Datasheet

    UFB15C12E1BC3N - Module Bulk Active SiCFET (Silicon Carbide) 4 P-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 24A (Tj) 90mOhm @ 15A, 12V 6V @ 10mA 46nC @ 15V 1445pF @ 800V 96W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount Module
    UHB50SC12E1BC3N

    UHB50SC12E1BC3N

    MOSFET 2P-CH 1200V 69A MODULE

    Qorvo

    3,127
    RFQ
    UHB50SC12E1BC3N

    Datasheet

    UHB50SC12E1BC3N - Module Bulk Active SiCFET (Silicon Carbide) 2 P-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 69A (Tj) 24mOhm @ 50A, 12V 6V @ 20mA 85nC @ 15V 2930pF @ 800V 208W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount Module
    UFB25SC12E1BC3N

    UFB25SC12E1BC3N

    MOSFET 4P-CH 1200V 36A MODULE

    Qorvo

    3,881
    RFQ
    UFB25SC12E1BC3N

    Datasheet

    UFB25SC12E1BC3N - Module Bulk Active SiCFET (Silicon Carbide) 4 P-Channel (Full Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 36A (Tj) 45mOhm @ 25A, 12V 6V @ 10mA 42.5nC @ 15V 1450pF @ 800V 114W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount Module
    UHB100SC12E1BC3N

    UHB100SC12E1BC3N

    MOSFET 2P-CH 1200V 100A MODULE

    Qorvo

    3,442
    RFQ
    UHB100SC12E1BC3N

    Datasheet

    UHB100SC12E1BC3N - Module Bulk Active SiCFET (Silicon Carbide) 2 P-Channel (Half Bridge) Silicon Carbide (SiC) 1200V (1.2kV) 100A (Tc) 12mOhm @ 70A, 12V 6V @ 40mA 170nC @ 15V 5859pF @ 800V 417W (Tc) -55°C ~ 150°C (TJ) - - Chassis Mount Module
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