Available 24/7 at SENICO ELECTRONICS INTL CO., LIMITED
    SENICO ELECTRONICS INTL CO., LIMITED

    FET, MOSFET Arrays

    Manufacturer Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































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    Photo Mfr. Part # Availability Price Quantity Datasheet RoHs Series Package/Case Packaging Product Status Technology Configuration FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Power - Max Operating Temperature Grade Qualification Mounting Type Supplier Device Package
    GCMX010A120B2B1P

    GCMX010A120B2B1P

    MOSFET 2N-CH 1200V 214A

    SemiQ

    4,016
    RFQ
    GCMX010A120B2B1P

    Datasheet

    GCMX010A120B2B1P - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 214A (Tc) 12mOhm @ 100A, 20V 4V @ 40mA 476nC @ 20V 13100pF @ 800V 750W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    GCMX080A120B2H1P

    GCMX080A120B2H1P

    MOSFET 4N-CH 1200V 27A

    SemiQ

    3,375
    RFQ
    GCMX080A120B2H1P

    Datasheet

    GCMX080A120B2H1P - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 27A (Tc) 100mOhm @ 20A, 20V 4V @ 10mA 56nC @ 20V 1362pF @ 800V 119W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    GCMX040A120B2H1P

    GCMX040A120B2H1P

    MOSFET 4N-CH 1200V 56A

    SemiQ

    3,621
    RFQ
    GCMX040A120B2H1P

    Datasheet

    GCMX040A120B2H1P - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 56A (Tc) 52mOhm @ 40A, 20V 4V @ 10mA 121nC @ 20V 3200pF @ 800V 217W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    GCMX020A120B2B1P

    GCMX020A120B2B1P

    MOSFET 2N-CH 1200V 102A

    SemiQ

    3,256
    RFQ
    GCMX020A120B2B1P

    Datasheet

    GCMX020A120B2B1P - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 102A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 241nC @ 20V 6500pF @ 800V 385W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    GCMX040A120B3H1P

    GCMX040A120B3H1P

    MOSFET 4N-CH 1200V 53A

    SemiQ

    5,334
    RFQ
    GCMX040A120B3H1P

    Datasheet

    GCMX040A120B3H1P - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 53A (Tc) 52mOhm @ 40A, 20V 4V @ 10mA 125nC @ 20V 3200pF @ 800V 208W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    GCMX020A120B2H1P

    GCMX020A120B2H1P

    MOSFET 4N-CH 1200V 102A

    SemiQ

    3,419
    RFQ
    GCMX020A120B2H1P

    Datasheet

    GCMX020A120B2H1P - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 102A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 222nC @ 20V 5600pF @ 800V 333W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    GCMX010A120B3B1P

    GCMX010A120B3B1P

    MOSFET 2N-CH 1200V 173A

    SemiQ

    4,770
    RFQ
    GCMX010A120B3B1P

    Datasheet

    GCMX010A120B3B1P - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 173A (Tc) 14mOhm @ 100A, 20V 4V @ 40mA 483nC @ 20V 13800pF @ 800V 577W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    GCMX020A120B3H1P

    GCMX020A120B3H1P

    MOSFET 4N-CH 1200V 93A

    SemiQ

    4,635
    RFQ
    GCMX020A120B3H1P

    Datasheet

    GCMX020A120B3H1P - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1200V (1.2kV) 93A (Tc) 28mOhm @ 50A, 20V 4V @ 20mA 250nC @ 20V 6700pF @ 800V 300W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    GCMX005A120B3B1P

    GCMX005A120B3B1P

    MOSFET 4N-CH 1200V 383A

    SemiQ

    4,099
    RFQ
    GCMX005A120B3B1P

    Datasheet

    GCMX005A120B3B1P - Module Tray Active Silicon Carbide (SiC) 4 N-Channel (Half Bridge) - 1200V (1.2kV) 383A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 927nC @ 20V 23500pF @ 800V 1.154kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    GCMX005A120S7B1

    GCMX005A120S7B1

    MOSFET 2N-CH 1200V 348A

    SemiQ

    4,043
    RFQ
    GCMX005A120S7B1

    Datasheet

    GCMX005A120S7B1 - Module Tray Active Silicon Carbide (SiC) 2 N-Channel (Half Bridge) - 1200V (1.2kV) 348A (Tc) 7mOhm @ 200A, 20V 4V @ 80mA 978nC @ 20V 29300pF @ 800V 1.042kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
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