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FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SICW080N120H4-BPSIC MOSFET,TO-247-4 Micro Commercial Co |
4,307 | - |
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Datasheet |
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- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 33A (Tc) | 20V | 110mOhm @ 15A, 20V | 4.5V @ 20mA | 131 nC @ 20 V | +20V, -5V | 2644 pF @ 800 V | - | 224W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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SICW060N065H4-BPSIC MOSFETS,TO-247-4 Micro Commercial Co |
5,305 | - |
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Datasheet |
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- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 60A (Tc) | 18V | 75mOhm @ 20A, 18V | 4.5V @ 20mA | 121 nC @ 18 V | +18V, -5V | 1850 pF @ 400 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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SICW050N065H4-BPSIC MOSFET,TO-247-4 Micro Commercial Co |
3,514 | - |
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Datasheet |
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- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 60A (Tc) | 20V | 65mOhm @ 20A, 20V | 4.5V @ 20mA | 121 nC @ 20 V | +20V, -5V | 1850 pF @ 400 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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MSJW47N60A-BPMOSFET Micro Commercial Co |
4,284 | - |
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Datasheet |
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- | TO-247-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 91mOhm @ 10A, 10V | 4V @ 250µA | 123 nC @ 10 V | ±30V | 4476 pF @ 300 V | - | 278W (Tj) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
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SICBG160N120A-TPMOSFET N-CH 1200V 18A TO263-7 Micro Commercial Co |
3,487 | - |
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Datasheet |
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- | TO-263-7, D2PAK (6 Leads + Tab), TO-263CB | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 18A (Tc) | 16V, 20V | 140mOhm @ 9A, 20V | 3V @ 2.5mA | 47 nC @ 18 V | +22V, -5V | 780 pF @ 1000 V | - | 116W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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MSJWFR60N60-BPN-CHANNEL MOSFET,TO-247AB Micro Commercial Co |
3,132 | - |
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Datasheet |
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- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 58A (Tc) | 10V | 30mOhm @ 37.5A, 10V | 5V @ 5mA | 197 nC @ 10 V | ±30V | 8078 pF @ 100 V | - | 223W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AB |
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SICW020N065H-BPSIC MOSFETS,TO-247AB Micro Commercial Co |
3,809 | - |
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- | TO-247-3 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 107A (Tc) | 20V | 26mOhm @ 50A, 20V | 4.5V @ 50mA | 287 nC @ 20 V | +25V, -10V | 5740 pF @ 400 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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SICW020N065H4-BPSIC MOSFETS,TO-247-4 Micro Commercial Co |
5,262 | - |
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Datasheet |
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- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 107A (Tc) | 20V | 26mOhm @ 50A, 20V | 4.5V @ 50mA | 287 nC @ 20 V | +20V, -5V | 5740 pF @ 400 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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SICW030N120H-BPSIC MOSFETS,TO-247AB Micro Commercial Co |
5,577 | - |
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Datasheet |
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- | TO-247-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 78A (Tc) | 20V | 40mOhm @ 40A, 20V | 4.5V @ 50mA | 305 nC @ 20 V | +25V, -10V | 4909 pF @ 800 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247AB |
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SICW030N120H4-BPSIC MOSFETS,TO-247-4 Micro Commercial Co |
4,850 | - |
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Datasheet |
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- | TO-247-4 | Bulk | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 78A (Tc) | 20V | 40mOhm @ 40A, 20V | 4.5V @ 50mA | 305 nC @ 20 V | +20V, -5V | 4909 pF @ 800 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
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