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FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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QS1200SCM361200V 36AMP SiC Mosfet Quest Semi |
4,100 | - |
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Datasheet |
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- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A | 2.8V | 100mOhm @ 20A, 20V | 3.8V @ 100µA | 60 nC @ 600 V | +25V, -10V | 1001 pF @ 800 V | - | 198W | -55°C ~ 175°C | Automotive | - | Through Hole | PG-TO247-3 |
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QS65SCM65D2P650v 65amp SiC Mosfet D2PAK Quest Semi |
4,081 | - |
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- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 650 V | 65A (Tc) | 18V, 20V | 70mOhm @ 25A, 20V | 5V @ 8mA | 105 nC @ 18 V | +25V, -10V | 1946 pF @ 400 V | - | 294W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
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QS1700SCM81700v 8AMP SiC Mosfet Quest Semi |
3,440 | - |
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Datasheet |
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- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 8A | 20V | 100mOhm @ 2A, 20V | 4V @ 10mA | 16 nC @ 1200 V | - | 142 pF @ 1000 V | - | 88W | -55°C ~ 175°C | Automotive | - | Through Hole | PG-TO247-3 |
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QS120SCM80D2P1200V N-CHANNEL SIC MOSFET 80 M Quest Semi |
4,868 | - |
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Datasheet |
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- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 20V | 100mOhm @ 20A, 20V | 3.8V @ 5mA | 60 nC @ 20 V | +25V, -10V | 1001 pF @ 800 V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK-7L |
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