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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SIHA17N80AEF-GE3EF SERIES POWER MOSFET WITH FAST Vishay Siliconix |
3,372 |
|
Datasheet |
 |
- | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6.5A (Tc) | 10V | 305mOhm @ 8.5A, 10V | 4V @ 250µA | 63 nC @ 10 V | ±30V | 1300 pF @ 100 V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
IRFZ48SPBFMOSFET N-CH 60V 50A D2PAK Vishay Siliconix |
4,291 |
|
Datasheet |
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 18mOhm @ 43A, 10V | 4V @ 250µA | 110 nC @ 10 V | ±20V | 2400 pF @ 25 V | - | 3.7W (Ta), 190W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
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SIHB21N60EF-GE3MOSFET N-CH 600V 21A TO263AB Vishay Siliconix |
3,387 |
|
Datasheet |
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 21A (Tc) | 10V | 176mOhm @ 11A, 10V | 4V @ 250µA | 84 nC @ 10 V | ±30V | 2030 pF @ 100 V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHB35N60E-GE3MOSFET N-CH 650V 32A D2PAK Vishay Siliconix |
3,108 |
|
Datasheet |
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 32A (Tc) | 10V | 94mOhm @ 17A, 10V | 4V @ 250µA | 132 nC @ 10 V | ±30V | 2760 pF @ 100 V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
SIHFL9110TR-GE3MOSFET P-CH 100V 1.1A SOT223 Vishay Siliconix |
3,230 |
|
Datasheet |
|
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 1.1A (Tc) | 10V | 1.2Ohm @ 660mA, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
|
IRF620STRRPBFMOSFET N-CH 200V 5.2A D2PAK Vishay Siliconix |
5,900 |
|
Datasheet |
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 5.2A (Tc) | 10V | 800mOhm @ 3.1A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 3W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D2PAK |
|
SQ2362ES-T1_BE3MOSFET N-CH 60V 4.3A SOT23-3 Vishay Siliconix |
3,877 |
|
Datasheet |
|
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 4.3A (Tc) | 4.5V, 10V | 68mOhm @ 2.4A, 10V | 2.5V @ 250µA | 12 nC @ 10 V | ±20V | 550 pF @ 30 V | - | 3W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | SOT-23-3 (TO-236) |
|
SIHFL210TR-GE3MOSFET N-CHANNEL 200V Vishay Siliconix |
3,012 |
|
Datasheet |
|
- | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 960mA (Tc) | 10V | 1.5Ohm @ 580mA, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 |
|
|
SQ2348ES-T1_GE3MOSFET N-CH 30V 8A TO236 Vishay Siliconix |
3,432 |
|
Datasheet |
|
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 24mOhm @ 12A, 10V | 2.5V @ 250µA | 14.5 nC @ 10 V | ±20V | 540 pF @ 15 V | - | 3W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
|
|
SI2343DS-T1-GE3MOSFET P-CH 30V 3.1A SOT23-3 Vishay Siliconix |
4,064 |
|
Datasheet |
|
TrenchFET® | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 3.1A (Ta) | 10V | 53mOhm @ 4A, 10V | 3V @ 250µA | 21 nC @ 10 V | ±20V | 540 pF @ 15 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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