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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIHA6N80E-GE3MOSFET N-CH 800V 5.4A TO220 Vishay Siliconix |
5,805 |
|
Datasheet |
 |
E | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.4A (Tc) | 10V | 940mOhm @ 3A, 10V | 4V @ 250µA | 44 nC @ 10 V | ±30V | 827 pF @ 100 V | - | 31W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 Full Pack |
|
SUP18N15-95-E3MOSFET N-CH 150V 18A TO220-3 Vishay Siliconix |
3,022 |
|
- |
|
TrenchFET® | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 18A (Tc) | 6V, 10V | 95mOhm @ 15A, 10V | 2V @ 250µA (Min) | 25 nC @ 10 V | ±20V | 900 pF @ 25 V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
SI4104DY-T1-GE3MOSFET N-CH 100V 4.6A 8SO Vishay Siliconix |
5,264 |
|
- |
|
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.6A (Tc) | 10V | 105mOhm @ 5A, 10V | 4.5V @ 250µA | 13 nC @ 10 V | ±20V | 446 pF @ 50 V | - | 2.5W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
|
SI4628DY-T1-GE3MOSFET N-CH 30V 38A 8SO Vishay Siliconix |
4,042 |
|
Datasheet |
|
SkyFET®, TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 38A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 2.5V @ 1mA | 87 nC @ 10 V | ±20V | 3450 pF @ 15 V | - | 3.5W (Ta), 7.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
IRFBF20STRRPBFMOSFET N-CH 900V 1.7A D2PAK Vishay Siliconix |
4,822 |
|
Datasheet |
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 900 V | 1.7A (Tc) | 10V | 8Ohm @ 1A, 10V | 4V @ 250µA | 38 nC @ 10 V | ±20V | 490 pF @ 25 V | - | 3.1W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
IRFZ34STRLPBFMOSFET N-CH 60V 30A D2PAK Vishay Siliconix |
5,952 |
|
Datasheet |
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 30A (Tc) | 10V | 50mOhm @ 18A, 10V | 4V @ 250µA | 46 nC @ 10 V | ±20V | 1200 pF @ 25 V | - | 3.7W (Ta), 88W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
IRFZ24STRRPBFMOSFET N-CH 60V 17A TO263 Vishay Siliconix |
3,929 |
|
- |
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (D2PAK) |
|
|
IRFZ24STRLPBFMOSFET N-CH 60V 17A D2PAK Vishay Siliconix |
4,200 |
|
- |
|
- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 17A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±20V | 640 pF @ 25 V | - | 3.7W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
|
|
SI4384DY-T1-E3MOSFET N-CH 30V 10A 8SO Vishay Siliconix |
5,433 |
|
Datasheet |
|
TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 8.5mOhm @ 15A, 10V | 3V @ 250µA | 18 nC @ 4.5 V | ±20V | - | - | 1.47W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
IRFD9220PBFMOSFET P-CH 200V 560MA 4DIP Vishay Siliconix |
4,614 |
|
Datasheet |
|
- | 4-DIP (0.300", 7.62mm) | Tube | Obsolete | P-Channel | MOSFET (Metal Oxide) | 200 V | 560mA (Ta) | 10V | 1.5Ohm @ 340mA, 10V | 4V @ 250µA | 15 nC @ 10 V | ±20V | 340 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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