Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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IRFR210MOSFET N-CH 200V 2.6A DPAK Vishay Siliconix |
4,670 | - |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFU014MOSFET N-CH 60V 7.7A TO251AA Vishay Siliconix |
3,234 | - |
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- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 7.7A (Tc) | 10V | 200mOhm @ 4.6A, 10V | 4V @ 250µA | 11 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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IRFU210MOSFET N-CH 200V 2.6A TO251AA Vishay Siliconix |
5,162 | - |
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- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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IRFU110MOSFET N-CH 100V 4.3A TO251AA Vishay Siliconix |
4,106 | - |
|
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- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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IRFU214MOSFET N-CH 250V 2.2A TO251AA Vishay Siliconix |
5,046 | - |
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- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 250 V | 2.2A (Tc) | 10V | 2Ohm @ 1.3A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
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IRFR110TRLMOSFET N-CH 100V 4.3A DPAK Vishay Siliconix |
3,910 | - |
|
![]() Datasheet |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFR110TRRMOSFET N-CH 100V 4.3A DPAK Vishay Siliconix |
4,412 | - |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 4.3A (Tc) | 10V | 540mOhm @ 2.6A, 10V | 4V @ 250µA | 8.3 nC @ 10 V | ±20V | 180 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRFR210TRRMOSFET N-CH 200V 2.6A DPAK Vishay Siliconix |
4,330 | - |
|
![]() Datasheet |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 2.6A (Tc) | 10V | 1.5Ohm @ 1.6A, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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SIE822DF-T1-E3MOSFET N-CH 20V 50A 10POLARPAK Vishay Siliconix |
5,415 | - |
|
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TrenchFET® | 10-PolarPAK® (S) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 50A (Tc) | 4.5V, 10V | 3.4mOhm @ 18.3A, 10V | 3V @ 250µA | 78 nC @ 10 V | ±20V | 4200 pF @ 10 V | - | 5.2W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 10-PolarPAK® (S) |
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SI4890DY-T1-GE3MOSFET N-CH 30V 11A 8-SOIC Vishay Siliconix |
5,081 | - |
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TrenchFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 11A (Ta) | 4.5V, 10V | 12mOhm @ 11A, 10V | 800mV @ 250µA (Min) | 20 nC @ 5 V | ±25V | - | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |