Available 24/7 at
SENICO ELECTRONICS INTL CO., LIMITED
Login or
REGISTER
FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SIR166DP-T1-GE3MOSFET N-CH 30V 40A PPAK SO-8 Vishay Siliconix |
3,118 |
|
Datasheet |
 |
TrenchFET® | PowerPAK® SO-8 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 40A (Tc) | 4.5V, 10V | 3.2mOhm @ 15A, 10V | 2.2V @ 250µA | 77 nC @ 10 V | ±20V | 3340 pF @ 15 V | - | 5W (Ta), 48W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® SO-8 |
|
SISS60DN-T1-GE3MOSFET N-CH 30V 50.1/181.8A PPAK Vishay Siliconix |
3,232 |
|
Datasheet |
|
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 50.1A (Ta), 181.8A (Tc) | 4.5V, 10V | 1.31mOhm @ 20A, 10V | 2.5V @ 250µA | 85.5 nC @ 10 V | +16V, -12V | 3960 pF @ 15 V | Schottky Diode (Body) | 5.1W (Ta), 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
|
SISS66DN-T1-GE3MOSFET N-CH 30V 49.1/178.3A PPAK Vishay Siliconix |
3,010 |
|
Datasheet |
|
TrenchFET® Gen IV | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 49.1A (Ta), 178.3A (Tc) | 4.5V, 10V | 1.38mOhm @ 20A, 10V | 2.5V @ 250µA | 85.5 nC @ 10 V | +20V, -16V | 3327 pF @ 15 V | Schottky Diode (Body) | 5.1W (Ta), 65.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
SIHU7N60E-GE3MOSFET N-CH 600V 7A IPAK Vishay Siliconix |
4,108 |
|
Datasheet |
|
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40 nC @ 10 V | ±30V | 680 pF @ 100 V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251AA |
.jpg)
|
IRFR9014PBF-BE3P-CHANNEL 60V Vishay Siliconix |
3,646 |
|
Datasheet |
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12 nC @ 10 V | ±20V | 270 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
SISS5112DN-T1-GE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
3,483 |
|
Datasheet |
|
TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 11A (Ta), 40.7A (Tc) | 7.5V, 10V | 14.9mOhm @ 10A, 10V | 4V @ 250µA | 16 nC @ 10 V | ±20V | 790 pF @ 50 V | - | 3.7W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
|
|
IRFR220PBF-BE3N-CHANNEL 200V Vishay Siliconix |
3,446 |
|
Datasheet |
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 4.8A (Tc) | 10V | 800mOhm @ 2.9A, 10V | 4V @ 250µA | 14 nC @ 10 V | ±20V | 260 pF @ 25 V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252AA |
|
IRFR9110TRLPBFMOSFET P-CH 100V 3.1A DPAK Vishay Siliconix |
5,860 |
|
Datasheet |
|
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 3.1A (Tc) | 10V | 1.2Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7 nC @ 10 V | ±20V | 200 pF @ 25 V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
;;3.jpg)
|
SIHU4N80AE-GE3MOSFET N-CH 800V 4.3A IPAK Vishay Siliconix |
3,756 |
|
Datasheet |
|
E | TO-251-3 Long Leads, IPAK, TO-251AB | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 4.3A (Tc) | 10V | 1.27Ohm @ 2A, 10V | 4V @ 250µA | 32 nC @ 10 V | ±30V | 622 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK (TO-251) |
|
|
SISS5110DN-T1-GE3N-CHANNEL 100 V (D-S) MOSFET POW Vishay Siliconix |
5,483 |
|
Datasheet |
|
TrenchFET® | PowerPAK® 1212-8S | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 13.4A (Ta), 46.4A (Tc) | 7.5V, 10V | 8.9mOhm @ 10A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±25V | 920 pF @ 50 V | - | 4.8W (Ta), 56.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PowerPAK® 1212-8S |
- Help you to save your cost and time.
- Reliable package for your goods.
- Fast reliable delivery to save time.
- Quality premium after-sale service.
Copyright © 2025 SENICO ELECTRONICS INTL CO., LIMITED All Rights Reserved
