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FETs, MOSFETs
| Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRFD2100.6A 200V 1.500 OHM N-CHANNEL Harris Corporation |
3,337 | - |
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Datasheet |
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- | 4-DIP (0.300", 7.62mm) | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 600mA (Ta) | 10V | 1.5Ohm @ 360mA, 10V | 4V @ 250µA | 8.2 nC @ 10 V | ±20V | 140 pF @ 25 V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | 4-DIP, Hexdip, HVMDIP |
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IRFD9120MOSFET P-CH 100V 1A 4DIP Harris Corporation |
3,739 | - |
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Datasheet |
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- | 4-DIP (0.300", 7.62mm) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 100 V | 1A (Ta) | 10V | 600mOhm @ 600mA, 10V | 4V @ 250µA | 18 nC @ 10 V | ±20V | 390 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | 4-HVMDIP |
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RFP50N05N-CHANNEL POWER MOSFET Harris Corporation |
3,650 | - |
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Datasheet |
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- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 50 V | 50A (Tc) | 10V | 22mOhm @ 50A, 10V | 4V @ 250nA | 160 nC @ 20 V | ±20V | - | - | 132W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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RFD8P05SM9AP-CHANNEL POWER MOSFET Harris Corporation |
4,537 | - |
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Datasheet |
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- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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HUF75339P3MOSFET N-CH 55V 75A TO220-3 Harris Corporation |
4,287 | - |
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Datasheet |
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UltraFET™ | TO-220-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 55 V | 75A (Tc) | 10V | 12mOhm @ 75A, 10V | 4V @ 250µA | 130 nC @ 20 V | ±20V | 2000 pF @ 25 V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220-3 |
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RF1S45N06LESM9AN-CHANNEL POWER MOSFET Harris Corporation |
5,273 | - |
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Datasheet |
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- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF9520MOSFET P-CH 100V 6A TO220AB Harris Corporation |
5,530 | - |
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Datasheet |
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- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 6A (Tc) | - | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 22 nC @ 10 V | ±20V | 300 pF @ 25 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
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HRF3205L100A 55V 0.008 OHM N-CHANNEL Harris Corporation |
4,525 | - |
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Datasheet |
|
- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 100A (Tc) | 10V | 8mOhm @ 59A, 10V | 4V @ 250µA | 170 nC @ 10 V | ±20V | 4000 pF @ 25 V | - | 175W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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RFM3N45N-CHANNEL POWER MOSFET Harris Corporation |
3,473 | - |
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Datasheet |
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- | TO-204AA, TO-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 450 V | 3A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 1mA | - | ±20V | 750 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3 |
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RF1S45N06LE45A, 60V, 0.028OHM, N-CHANNEL, Harris Corporation |
4,152 | - |
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Datasheet |
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- | TO-262-3 Long Leads, I2PAK, TO-262AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Tc) | 5V | 28mOhm @ 45A, 5V | 2V @ 250µA | 135 nC @ 10 V | ±10V | 2150 pF @ 25 V | - | 142W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-262 (I2PAK) |
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