Manufacturer | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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TK15A60U(STA4,Q,M)MOSFET N-CH 600V 15A TO220SIS Toshiba Semiconductor and Storage |
3,108 | - |
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DTMOSII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 5V @ 1mA | 17 nC @ 10 V | ±30V | 950 pF @ 10 V | - | 40W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK20A60U(Q,M)MOSFET N-CH 600V 20A TO220SIS Toshiba Semiconductor and Storage |
3,950 | - |
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DTMOSII | TO-220-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 190mOhm @ 10A, 10V | 5V @ 1mA | 27 nC @ 10 V | ±30V | 1470 pF @ 10 V | - | 45W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TPC6109-H(TE85L,FMMOSFET P-CH 30V 5A VS-6 Toshiba Semiconductor and Storage |
4,428 | - |
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U-MOSIII-H | SOT-23-6 Thin, TSOT-23-6 | Tape & Reel (TR) | Obsolete | P-Channel | MOSFET (Metal Oxide) | 30 V | 5A (Ta) | 4.5V, 10V | 59mOhm @ 2.5A, 10V | 1.2V @ 200µA | 12.3 nC @ 10 V | ±20V | 490 pF @ 10 V | - | 700mW (Ta) | 150°C (TJ) | - | - | Surface Mount | VS-6 (2.9x2.8) |
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2SK2266(TE24R,Q)MOSFET N-CH 60V 45A TO220SM Toshiba Semiconductor and Storage |
3,390 | - |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Ta) | 4V, 10V | 30mOhm @ 25A, 10V | 2V @ 1mA | 60 nC @ 10 V | ±20V | 1800 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-220SM |
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2SK2376(Q)MOSFET N-CH 60V 45A TO220FL Toshiba Semiconductor and Storage |
3,032 | - |
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- | TO-220-3, Short Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 45A (Ta) | 4V, 10V | 17mOhm @ 25A, 10V | 2V @ 1mA | 110 nC @ 10 V | ±20V | 3350 pF @ 10 V | - | 100W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FL |
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2SK3309(Q)MOSFET N-CH 450V 10A TO220FL Toshiba Semiconductor and Storage |
4,990 | - |
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- | TO-220-3, Short Tab | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450 V | 10A (Ta) | 10V | 650mOhm @ 5A, 10V | 5V @ 1mA | 23 nC @ 10 V | ±30V | 920 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220FL |
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2SK3309(TE24L,Q)MOSFET N-CH 450V 10A TO220SM Toshiba Semiconductor and Storage |
3,854 | - |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 450 V | 10A (Ta) | 10V | 650mOhm @ 5A, 10V | 5V @ 1mA | 23 nC @ 10 V | ±30V | 920 pF @ 10 V | - | 65W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-220SM |
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TK12A60U(Q,M)MOSFET N-CH 600V 12A TO220SIS Toshiba Semiconductor and Storage |
4,299 | - |
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DTMOSII | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Ta) | 10V | 400mOhm @ 6A, 10V | 5V @ 1mA | 14 nC @ 10 V | ±30V | 720 pF @ 10 V | - | 35W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-220SIS |
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TK12J60U(F)MOSFET N-CH 600V 12A TO3P Toshiba Semiconductor and Storage |
3,936 | - |
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DTMOSII | TO-3P-3, SC-65-3 | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 12A (Ta) | 10V | 400mOhm @ 6A, 10V | 5V @ 1mA | 14 nC @ 10 V | ±30V | 720 pF @ 10 V | - | 144W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |
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TK15J60U(F)MOSFET N-CH 600V 15A TO3P Toshiba Semiconductor and Storage |
3,780 | - |
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DTMOSII | TO-3P-3, SC-65-3 | Tray | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 15A (Ta) | 10V | 300mOhm @ 7.5A, 10V | 5V @ 1mA | 17 nC @ 10 V | ±30V | 950 pF @ 10 V | - | 170W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-3P(N) |