Available 24/7 at
SENICO ELECTRONICS INTL CO., LIMITED
Login or
REGISTER
FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STW26NM60NN-channel 600 V, 0.135 Ohm typ., |
4,468 |
|
Datasheet |
 |
MDmesh™ II | TO-247-3 | Tube | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 60 nC @ 10 V | ±30V | 1800 pF @ 50 V | - | 140W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
GS61008T-MRGS61008T-MR |
3,010 |
|
- |
|
- | 4-SMD, No Lead | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 100 V | 90A (Tc) | 6V | 9.5mOhm @ 27A, 6V | 1.3V @ 7mA | 12 nC @ 6 V | +7V, -10V | 590 pF @ 50 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
|
IXFH50N60P3MOSFET N-CH 600V 50A TO247AD |
4,645 |
|
Datasheet |
|
HiPerFET™, Polar3™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 50A (Tc) | 10V | 145mOhm @ 500mA, 10V | 5V @ 4mA | 94 nC @ 10 V | ±30V | 6300 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
|
IXFH150N25X3MOSFET N-CH 250V 150A TO247 |
5,194 |
|
Datasheet |
|
HiPerFET™, Ultra X3 | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 250 V | 150A (Tc) | 10V | 9mOhm @ 75A, 10V | 4.5V @ 4mA | 154 nC @ 10 V | ±20V | 10400 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 (IXTH) |
|
APT30M85BVRGMOSFET N-CH 300V 40A TO247 |
3,036 |
|
Datasheet |
|
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 300 V | 40A (Tc) | 10V | 85mOhm @ 500mA, 10V | 4V @ 1mA | 195 nC @ 10 V | ±30V | 4950 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
|
TK040N65Z,S1FMOSFET N-CH 650V 57A TO247 |
5,599 |
|
Datasheet |
|
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 57A (Ta) | 10V | 40mOhm @ 28.5A, 10V | 4V @ 2.85mA | 105 nC @ 10 V | ±30V | 6250 pF @ 300 V | - | 360W (Tc) | 150°C | - | - | Through Hole | TO-247 |
|
TW140N120C,S1FG3 1200V SIC-MOSFET TO-247 140M |
3,883 |
|
Datasheet |
|
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 18V | 182mOhm @ 10A, 18V | 5V @ 1mA | 24 nC @ 18 V | +25V, -10V | 691 pF @ 800 V | - | 107W (Tc) | 175°C | - | - | Through Hole | TO-247 |
|
|
TK042N65Z5,S1F(S650V DTMOS6 HSD 42MOHM TO-247 |
5,620 |
|
Datasheet |
|
DTMOSVI | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 55A (Ta) | 10V | 42mOhm @ 27.5A, 10V | 4.5V @ 2.85mA | 105 nC @ 10 V | ±30V | 6280 pF @ 300 V | - | 360W (Tc) | 150°C | - | - | Through Hole | TO-247 |
|
|
STW26NM50MOSFET N-CH 500V 30A TO247-3 |
4,451 |
|
Datasheet |
|
MDmesh™ | TO-247-3 | Tube | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 500 V | 30A (Tc) | 10V | 120mOhm @ 13A, 10V | 5V @ 250µA | 106 nC @ 10 V | ±30V | 3000 pF @ 25 V | - | 313W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
APT1001RBVRGMOSFET N-CH 1000V 11A TO247 |
5,397 |
|
Datasheet |
|
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 11A (Tc) | - | 1Ohm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | - | 3660 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
|
IXFT80N65X2HVMOSFET N-CH 650V 80A TO268HV |
4,629 |
|
Datasheet |
|
HiPerFET™, Ultra X2 | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 80A (Tc) | 10V | - | 5V @ 4mA | 140 nC @ 10 V | ±30V | 8300 pF @ 25 V | - | 890W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268HV (IXFT) |
|
|
APT6025BVRGMOSFET N-CH 600V 25A TO247 |
3,953 |
|
Datasheet |
|
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 25A (Tc) | - | 250mOhm @ 500mA, 10V | 4V @ 1mA | 275 nC @ 10 V | - | 5160 pF @ 25 V | - | - | - | - | - | Through Hole | TO-247 [B] |
.jpg)
|
IXKH47N60CMOSFET N-CH 600V 47A TO247AD |
5,882 |
|
Datasheet |
|
CoolMOS™ | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 4V @ 2mA | 650 nC @ 10 V | ±20V | - | - | - | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD |
|
|
IMLT65R020M2HXTMA1SILICON CARBIDE MOSFET |
5,546 |
|
Datasheet |
|
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
IXTT110N10L2MOSFET N-CH 100V 110A TO268 |
4,086 |
|
Datasheet |
|
Linear L2™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 110A (Tc) | 10V | 18mOhm @ 55A, 10V | 4.5V @ 250µA | 260 nC @ 10 V | ±20V | 10500 pF @ 25 V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-268AA |
|
APT37M100LMOSFET N-CH 1000V 37A TO264 |
3,791 |
|
Datasheet |
|
- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 37A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9835 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 |
|
|
TW045Z120C,S1FG3 1200V SIC-MOSFET TO-247-4L 4 |
3,697 |
|
Datasheet |
|
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 62mOhm @ 20A, 18V | 5V @ 6.7mA | 57 nC @ 18 V | +25V, -10V | 1969 pF @ 800 V | - | 182W (Tc) | 175°C | - | - | Through Hole | TO-247-4L(X) |
|
AIMW120R045M1XKSA1SICFET N-CH 1200V 52A TO247-3 |
4,115 |
|
Datasheet |
|
CoolSiC™ | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 52A (Tc) | - | 59mOhm @ 20A, 15V | 5.7V @ 10mA | 57 nC @ 15 V | +20V, -7V | 2130 pF @ 800 V | - | 228W (Tc) | -40°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | PG-TO247-3 |
|
|
TW045N120C,S1FG3 1200V SIC-MOSFET TO-247 45MO |
3,482 |
|
Datasheet |
|
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 40A (Tc) | 18V | 59mOhm @ 20A, 18V | 5V @ 6.7mA | 57 nC @ 18 V | +25V, -10V | 1969 pF @ 800 V | - | 182W (Tc) | 175°C | - | - | Through Hole | TO-247 |
|
|
IPDQ60R007CM8XTMA1IPDQ60R007CM8XTMA1 |
5,068 |
|
- |
|
CoolMOS™ | 22-PowerBSOP Module | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 288A (Tc) | 10V | 7mOhm @ 100A, 10V | 4.7V @ 3.24mA | 370 nC @ 10 V | ±20V | 16385 pF @ 400 V | - | 1.249kW (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-HDSOP-22 |
- Help you to save your cost and time.
- Reliable package for your goods.
- Fast reliable delivery to save time.
- Quality premium after-sale service.
Copyright © 2025 SENICO ELECTRONICS INTL CO., LIMITED All Rights Reserved
