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FETs, MOSFETs
| Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
ASZM040120TN-CHANNEL SILICON CARBIDE POWER |
4,585 |
|
Datasheet |
 |
- | TO-247-4 | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 68A (Tc) | 18V, 20V | 32mOhm @ 40A, 20V | 3.6V @ 9.5mA | 87 nC @ 18 V | +25V, -10V | 2820 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
TPH3208LDGGANFET N-CH 650V 20A 3PQFN |
4,435 |
|
Datasheet |
|
- | 3-PowerDFN | Tube | Obsolete | N-Channel | GaNFET (Gallium Nitride) | 650 V | 20A (Tc) | 10V | 130mOhm @ 13A, 8V | 2.6V @ 300µA | 14 nC @ 8 V | ±18V | 760 pF @ 400 V | - | 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 3-PQFN (8x8) |
|
R6030JNZC8MOSFET N-CH 600V 30A TO3PF |
5,418 |
|
- |
|
- | TO-3P-3 Full Pack | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 30A (Tc) | 15V | 143mOhm @ 15A, 15V | 7V @ 5.5mA | 74 nC @ 15 V | ±30V | 2500 pF @ 100 V | - | 93W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-3PF |
|
STWA57N65M5MOSFET N-CH 650V 42A TO247 |
4,783 |
|
Datasheet |
|
MDmesh™ V | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±25V | 4200 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
GC041N65QFMOSFET N-CH 650V 70A TO-247 |
4,663 |
|
Datasheet |
|
SuperJunction | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 70A (Tc) | 10V | 43mOhm @ 20A, 10V | 5V @ 250µA | 160 nC @ 10 V | ±30V | 7668 pF @ 400 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
|
|
AS1M080120PN-CHANNEL SILICON CARBIDE POWER |
5,968 |
|
Datasheet |
|
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 20V | 98mOhm @ 20A, 20V | 4V @ 5mA | 79 nC @ 20 V | +25V, -10V | 1475 pF @ 1000 V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
APT43M60LMOSFET N-CH 600V 45A TO264 |
3,848 |
|
Datasheet |
|
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Last Time Buy | N-Channel | MOSFET (Metal Oxide) | 600 V | 45A (Tc) | 10V | 150mOhm @ 21A, 10V | 5V @ 2.5mA | 215 nC @ 10 V | ±30V | 8590 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
|
STW62NM60NMOSFET N-CH 600V 65A TO247 |
4,339 |
|
Datasheet |
|
MDmesh™ II | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 65A (Tc) | 10V | 49mOhm @ 32.5A, 10V | 4V @ 250µA | 174 nC @ 10 V | ±25V | 5800 pF @ 100 V | - | 450W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
|
STW57N65M5-4MOSFET N-CH 650V 42A TO247-4L |
4,152 |
|
Datasheet |
|
MDmesh™ V | TO-247-4 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 42A (Tc) | 10V | 63mOhm @ 21A, 10V | 5V @ 250µA | 98 nC @ 10 V | ±25V | 4200 pF @ 100 V | - | 250W (Tc) | 150°C (TJ) | - | - | Through Hole | TO-247-4L |
|
APT34F60BMOSFET N-CH 600V 36A TO247 |
4,741 |
|
Datasheet |
|
- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 210mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
|
FCHD040N65S3-F155MOSFET N-CH 650V 65A TO247 |
5,250 |
|
Datasheet |
|
SuperFET® III | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 65A (Tc) | 10V | 40mOhm @ 32.5A, 10V | 4.5V @ 1.7mA | 136 nC @ 10 V | ±30V | 4740 pF @ 400 V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247-3 |
|
STWA63N65DM2MOSFET N-CH 650V 60A TO247 |
3,024 |
|
Datasheet |
|
MDmesh™ DM2 | TO-247-3 | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 650 V | 60A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 120 nC @ 10 V | ±25V | 5500 pF @ 100 V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 Long Leads |
|
APT34F60SMOSFET N-CH 600V 36A D3PAK |
5,372 |
|
Datasheet |
|
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 36A (Tc) | 10V | 190mOhm @ 17A, 10V | 5V @ 1mA | 165 nC @ 10 V | ±30V | 6640 pF @ 25 V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | D3PAK |
|
H5N5016PL-EN-CHANNEL POWER MOSFET |
5,788 |
|
Datasheet |
|
* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
GPI65030DFNGANFET N-CH 650V 30A DFN8X8 |
3,822 |
|
Datasheet |
|
- | Die | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 30A | 6V | - | 1.2V @ 3.5mA | 5.8 nC @ 6 V | +7.5V, -12V | 241 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | Die |
|
|
GPI65030TO5LGaNFET N-CH 650V 30A TO263-5L |
4,748 |
|
Datasheet |
|
- | - | Tape & Reel (TR) | Active | N-Channel | GaNFET (Gallium Nitride) | 650 V | 30A | 6V | - | 1.4V @ 3.5mA | 5.8 nC @ 6 V | +7.5V, -12V | 241 pF @ 400 V | - | - | -55°C ~ 150°C (TJ) | - | - | Surface Mount | - |
|
|
APT75M50LMOSFET N-CH 500V 75A TO264 |
3,272 |
|
Datasheet |
|
POWER MOS 8™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 75A (Tc) | 10V | 75mOhm @ 37A, 10V | 5V @ 2.5mA | 290 nC @ 10 V | ±30V | 11600 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
|
IV1Q12160T4SIC MOSFET, 1200V 160MOHM, TO-24 |
5,117 |
|
Datasheet |
|
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 20A (Tc) | 20V | 195mOhm @ 10A, 20V | 2.9V @ 1.9mA | 43 nC @ 20 V | +20V, -5V | 885 pF @ 800 V | - | 138W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4 |
|
IXFH12N100QMOSFET N-CH 1000V 12A TO247AD |
3,769 |
|
Datasheet |
|
HiPerFET™, Q Class | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 12A (Tc) | 10V | 1.05Ohm @ 6A, 10V | 5.5V @ 4mA | 90 nC @ 10 V | ±20V | 2900 pF @ 25 V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247AD (IXFH) |
|
|
APT6017LFLLGMOSFET N-CH 600V 35A TO264 |
3,493 |
|
Datasheet |
|
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 35A (Tc) | 10V | 170mOhm @ 17.5A, 10V | 5V @ 2.5mA | 100 nC @ 10 V | ±30V | 4500 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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