| Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | Diode Configuration | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) (per Diode) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Operating Temperature - Junction | Grade | Qualification | Mounting Type | Supplier Device Package | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|   | MUR20040CTRDIODE MODULE GP 400V 100A 2TOWER GeneSiC Semiconductor | 4,901 |  |   Datasheet |  | - | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 400 V | 100A | 1.3 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower | 
|   | MUR20060CTDIODE MODULE GP 600V 100A 2TOWER GeneSiC Semiconductor | 5,340 |  |   Datasheet |  | - | Twin Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 600 V | 100A | 1.7 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 110 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower | 
|   | MUR20060CTRDIODE MODULE GP 600V 100A 2TOWER GeneSiC Semiconductor | 5,994 |  |   Datasheet |  | - | Twin Tower | Bulk | Active | 1 Pair Common Anode | Standard | 600 V | 100A | 1.7 V @ 50 A | Fast Recovery =< 500ns, > 200mA (Io) | 110 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Twin Tower | 
|   | MURT30005DIODE MODULE GP 50V 150A 3TOWER GeneSiC Semiconductor | 4,949 |  |   Datasheet |  | - | Three Tower | Bulk | Obsolete | 1 Pair Common Cathode | Standard | 50 V | 150A | 1.3 V @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower | 
|   | MURT30005RDIODE MODULE GP 50V 150A 3TOWER GeneSiC Semiconductor | 3,765 |  |   Datasheet |  | - | Three Tower | Bulk | Obsolete | 1 Pair Common Anode | Standard | 50 V | 150A | 1.3 V @ 150 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower | 
|   | MURT20010DIODE MODULE GP 100V 100A 3TOWER GeneSiC Semiconductor | 5,987 |  |   Datasheet |  | - | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 100 V | 100A | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower | 
|   | MURT20010RDIODE MODULE GP 100V 100A 3TOWER GeneSiC Semiconductor | 3,970 |  |   Datasheet |  | - | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 100 V | 100A | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower | 
|   | MURT20020DIODE MODULE GP 200V 100A 3TOWER GeneSiC Semiconductor | 4,892 |  |   Datasheet |  | - | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 200 V | 100A | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower | 
|   | MURT20020RDIODE MODULE GP 200V 100A 3TOWER GeneSiC Semiconductor | 3,547 |  |   Datasheet |  | - | Three Tower | Bulk | Active | 1 Pair Common Anode | Standard | 200 V | 100A | 1.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower | 
|   | MURT20040DIODE MODULE GP 400V 100A 3TOWER GeneSiC Semiconductor | 3,062 |  |   Datasheet |  | - | Three Tower | Bulk | Active | 1 Pair Common Cathode | Standard | 400 V | 100A | 1.35 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 25 µA @ 50 V | -55°C ~ 150°C | - | - | Chassis Mount | Three Tower |