Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G3S06503ADIODE SIC 650V 11.5A TO220AC Global Power Technology-GPT |
5,945 |
|
![]() Datasheet |
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.5A | 1.7 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 181pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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G3S06504CDIODE SIL CARB 650V 11.5A TO252 Global Power Technology-GPT |
4,139 |
|
![]() Datasheet |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.5A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 181pF @ 0V, 1MHz | - | - | Surface Mount | TO-252 | -55°C ~ 175°C | |
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G3S06504ADIODE SIC 650V 11.5A TO220AC Global Power Technology-GPT |
4,644 |
|
![]() Datasheet |
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- | TO-220-2 | Cut Tape (CT) | Active | SiC (Silicon Carbide) Schottky | 650 V | 11.5A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 181pF @ 0V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |