Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
S8MS-M3/H 8A, 1000V, STD RECT , SMC Vishay	5,255	-	RFQ	Datasheet	-	DO-214AB, SMC	Tape & Reel (TR)	Active	Standard	1000 V	1.6A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	3.6 µs	10 µA @ 1000 V	72pF @ 4V, 1MHz	-	-	Surface Mount	DO-214AB (SMC)	-55°C ~ 150°C
S8GS-M3/H 8A, 400V, STD RECT, SMC Vishay	4,994	-	RFQ	Datasheet	-	DO-214AB, SMC	Tape & Reel (TR)	Active	Standard	400 V	1.6A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	3.6 µs	10 µA @ 400 V	72pF @ 4V, 1MHz	-	-	Surface Mount	DO-214AB (SMC)	-55°C ~ 150°C
S5MB-TP RECTIFIERS Micro Commercial Co	3,204	-	RFQ	-	-	DO-214AA, SMB	Tape & Reel (TR)	Active	Standard	1000 V	5A	1.1 V @ 5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	35pF @ 4V, 1MHz	-	-	Surface Mount	DO-214AA (SMB)	-55°C ~ 150°C
SE40PBHM3_A/I DIODE GEN PURP 100V 2.4A TO277A Vishay General Semiconductor - Diodes Division	4,041	-	RFQ	Datasheet	eSMP®	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Standard	100 V	2.4A	1.05 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	2.2 µs	10 µA @ 100 V	28pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-277A (SMPC)	-55°C ~ 175°C
SE40PDHM3_A/I DIODE GEN PURP 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division	4,592	-	RFQ	Datasheet	eSMP®	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Standard	200 V	2.4A	1.05 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	2.2 µs	10 µA @ 200 V	28pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-277A (SMPC)	-55°C ~ 175°C
SE40PGHM3_A/I DIODE GEN PURP 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division	4,837	-	RFQ	Datasheet	eSMP®	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Standard	200 V	2.4A	1.05 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	2.2 µs	10 µA @ 200 V	28pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-277A (SMPC)	-55°C ~ 175°C
SBRT4U15LP-7 DIODE SBR 15V 4A U-DFN2020-2 Diodes Incorporated	4,406	-	RFQ	-	-	2-UDFN	Tape & Reel (TR)	Obsolete	Super Barrier	15 V	4A	470 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 15 V	-	Automotive	AEC-Q101	Surface Mount	U-DFN2020-2	-55°C ~ 150°C
MURS3JBFL-TP Interface Micro Commercial Co	4,523	-	RFQ	Datasheet	-	DO-221AA, SMB Flat Leads	Bulk	Active	Standard	600 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	55pF @ 4V, 1MHz	-	-	Surface Mount	SMBF	-55°C ~ 150°C
CDBB3200LR-HF DIODE SCHOTTKY 200V 3A DO214AA Comchip Technology	3,393	-	RFQ	Datasheet	-	DO-214AA, SMB	Tape & Reel (TR)	Active	Schottky	200 V	3A	850 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 200 V	250pF @ 4V, 1MHz	-	-	Surface Mount	DO-214AA (SMB)	-50°C ~ 175°C
U3B-E3/9AT DIODE GEN PURP 100V 2A DO214AB Vishay General Semiconductor - Diodes Division	3,401	-	RFQ	Datasheet	-	DO-214AB, SMC	Tape & Reel (TR)	Obsolete	Standard	100 V	2A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	10 µA @ 100 V	-	-	-	Surface Mount	DO-214AB (SMC)	-55°C ~ 150°C
U3C-E3/9AT DIODE GEN PURP 150V 2A DO214AB Vishay General Semiconductor - Diodes Division	3,824	-	RFQ	Datasheet	-	DO-214AB, SMC	Tape & Reel (TR)	Obsolete	Standard	150 V	2A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	10 µA @ 150 V	-	-	-	Surface Mount	DO-214AB (SMC)	-55°C ~ 150°C
BY527TAP DIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division	5,919	-	RFQ	Datasheet	-	SOD-57, Axial	Tape & Box (TB)	Active	Avalanche	800 V	2A	1.65 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	1 µA @ 800 V	16pF @ 4V, 1MHz	-	-	Through Hole	SOD-57	-55°C ~ 175°C
BYT52A-TAP DIODE AVALANCHE 50V 1.4A SOD57 Vishay General Semiconductor - Diodes Division	3,121	-	RFQ	Datasheet	-	SOD-57, Axial	Tape & Box (TB)	Active	Avalanche	50 V	1.4A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 50 V	-	-	-	Through Hole	SOD-57	-55°C ~ 175°C
BYT52B-TAP DIODE AVALANCHE 100V 1.4A SOD57 Vishay General Semiconductor - Diodes Division	3,850	-	RFQ	Datasheet	-	SOD-57, Axial	Tape & Box (TB)	Active	Avalanche	100 V	1.4A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 100 V	-	-	-	Through Hole	SOD-57	-55°C ~ 175°C
BYT54A-TAP DIODE AVALANCHE 50V 1.25A SOD57 Vishay General Semiconductor - Diodes Division	3,886	-	RFQ	Datasheet	-	SOD-57, Axial	Tape & Box (TB)	Active	Avalanche	50 V	1.25A	1.5 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	5 µA @ 50 V	-	-	-	Through Hole	SOD-57	-55°C ~ 175°C
BYT54B-TAP DIODE AVALANCHE 100V 1.25A SOD57 Vishay General Semiconductor - Diodes Division	4,882	-	RFQ	Datasheet	-	SOD-57, Axial	Tape & Box (TB)	Active	Avalanche	100 V	1.25A	1.5 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	5 µA @ 100 V	-	-	-	Through Hole	SOD-57	-55°C ~ 175°C
BYV12-TAP DIODE AVALANCHE 100V 1.5A SOD57 Vishay General Semiconductor - Diodes Division	3,752	-	RFQ	Datasheet	-	SOD-57, Axial	Tape & Box (TB)	Active	Avalanche	100 V	1.5A	1.5 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	5 µA @ 100 V	-	-	-	Through Hole	SOD-57	-55°C ~ 175°C
BYV37-TAP DIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division	4,113	-	RFQ	Datasheet	-	SOD-57, Axial	Tape & Box (TB)	Active	Avalanche	800 V	2A	1.1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	5 µA @ 800 V	-	-	-	Through Hole	SOD-57	-55°C ~ 175°C
BYX83TAP DIODE AVALANCHE 400V 2A SOD57 Vishay General Semiconductor - Diodes Division	3,309	-	RFQ	Datasheet	-	SOD-57, Axial	Tape & Box (TB)	Active	Avalanche	400 V	2A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	1 µA @ 400 V	20pF @ 4V, 1MHz	-	-	Through Hole	SOD-57	-55°C ~ 175°C
BY527TR DIODE AVALANCHE 800V 2A SOD57 Vishay General Semiconductor - Diodes Division	4,206	-	RFQ	Datasheet	-	SOD-57, Axial	Tape & Reel (TR)	Active	Avalanche	800 V	2A	1.65 V @ 10 A	Standard Recovery >500ns, > 200mA (Io)	4 µs	1 µA @ 800 V	16pF @ 4V, 1MHz	-	-	Through Hole	SOD-57	-55°C ~ 175°C

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