Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
SK32-7-F DIODE SCHOTTKY 20V 3A SMC Diodes Incorporated	4,664	-	RFQ	Datasheet	-	DO-214AB, SMC	Tape & Reel (TR)	Obsolete	Schottky	20 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 20 V	300pF @ 4V, 1MHz	-	-	Surface Mount	SMC	-65°C ~ 150°C
MBRB1660-E3/81 DIODE SCHOTTKY 60V 16A TO263AB Vishay General Semiconductor - Diodes Division	5,923	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Obsolete	Schottky	60 V	16A	750 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-65°C ~ 150°C
MUR8100E DIODE GEN PURP 1KV 8A TO220-2 onsemi	3,619	-	RFQ	Datasheet	SWITCHMODE™	TO-220-2	Tube	Obsolete	Standard	1000 V	8A	1.8 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	25 µA @ 1000 V	-	-	-	Through Hole	TO-220-2	-65°C ~ 175°C
STTH2006W DIODE GEN PURP 600V 20A DO247 STMicroelectronics	3,329	-	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Obsolete	Standard	600 V	20A	1.75 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	25 µA @ 600 V	-	-	-	Through Hole	DO-247	175°C (Max)
LSM315J/TR13 DIODE SCHOTTKY 15V 3A DO214AB Microchip Technology	5,791	-	RFQ	Datasheet	-	DO-214AB, SMC	Tape & Reel (TR)	Active	Schottky	15 V	3A	320 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2 mA @ 15 V	-	-	-	Surface Mount	DO-214AB	-55°C ~ 125°C
JAN1N4150UR-1/TR DIODE GEN PURP 50V 200MA DO213AA Microchip Technology	3,962	-	RFQ	-	-	DO-213AA	Tape & Reel (TR)	Active	Standard	50 V	200mA	1 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	-	Military	MIL-PRF-19500/231	Surface Mount	DO-213AA	-65°C ~ 175°C
SE12DB-M3/I DIODE GEN PURP 100V 3.2A TO263AC Vishay General Semiconductor - Diodes Division	5,442	-	RFQ	Datasheet	eSMP®	TO-263-3, D2PAK (2 Leads + Tab), Variant	Tape & Reel (TR)	Active	Standard	100 V	3.2A	1.15 V @ 12 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	20 µA @ 100 V	90pF @ 4V, 1MHz	-	-	Surface Mount	TO-263AC (SMPD)	-55°C ~ 175°C
SDURB30Q60 DIODE GEN PURP 600V 30A D2PAK SMC Diode Solutions	3,322	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	10 µA @ 600 V	-	-	-	Surface Mount	D2PAK	-55°C ~ 150°C
VS-C08ET07T-M3 DIODE SIL CARB 650V 8A TO220AC Vishay General Semiconductor - Diodes Division	3,284	-	RFQ	-	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.8 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	45 µA @ 650 V	355pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
20TQ045 DIODE SCHOTTKY 45V 20A TO220AC Vishay General Semiconductor - Diodes Division	3,455	-	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Schottky	45 V	20A	570 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.7 mA @ 45 V	1400pF @ 5V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
VS-20ATS08-M3 DIODE GEN PURP 800V 20A TO220-3 Vishay General Semiconductor - Diodes Division	4,424	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	Standard	800 V	20A	1.1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 800 V	-	-	-	Through Hole	TO-220-3	-40°C ~ 150°C
IDH05G65C5XKSA2 DIODE SIL CARB 650V 5A TO220-2 Infineon Technologies	5,753	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	160pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2	-55°C ~ 175°C
SICRD5650 DIODE SIL CARBIDE 650V 5A DPAK SMC Diode Solutions	3,492	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	-	-	-	Surface Mount	DPAK	-55°C ~ 175°C
MUR440S V7G DIODE GEN PURP 400V 4A DO214AB Taiwan Semiconductor Corporation	3,204	-	RFQ	Datasheet	-	DO-214AB, SMC	Cut Tape (CT)	Discontinued at Digi-Key	Standard	400 V	4A	1.25 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	65pF @ 4V, 1MHz	-	-	Surface Mount	DO-214AB (SMC)	-55°C ~ 175°C
B530C-13 DIODE SCHOTTKY 30V 5A SMC Diodes Incorporated	5,547	-	RFQ	Datasheet	-	DO-214AB, SMC	Tape & Reel (TR)	Discontinued at Digi-Key	Schottky	30 V	5A	550 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	300pF @ 4V, 1MHz	-	-	Surface Mount	SMC	-55°C ~ 150°C
STPS3L25S DIODE SCHOTTKY 25V 3A SMC STMicroelectronics	3,116	-	RFQ	Datasheet	-	DO-214AB, SMC	Tape & Reel (TR)	Obsolete	Schottky	25 V	3A	490 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	90 µA @ 25 V	-	-	-	Surface Mount	SMC	150°C (Max)
SE20DBHM3/I DIODE GEN PURP 100V 3.9A TO263AC Vishay General Semiconductor - Diodes Division	4,946	-	RFQ	Datasheet	eSMP®	TO-263-3, D2PAK (2 Leads + Tab), Variant	Tape & Reel (TR)	Active	Standard	100 V	3.9A	1.2 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	3 µs	25 µA @ 100 V	150pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AC (SMPD)	-55°C ~ 175°C
SV1580V_R1_00001 ULTRA LOW VF SCHOTTKY BARRIER RE Panjit International Inc.	3,376	-	RFQ	-	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	80 V	15A	720 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 80 V	-	-	-	Surface Mount	TO-277	-55°C ~ 150°C
VS-20ATS12-M3 DIODE GEN PURP 1.2KV 20A TO220-3 Vishay General Semiconductor - Diodes Division	5,047	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	Standard	1200 V	20A	1.1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1200 V	-	-	-	Through Hole	TO-220-3	-40°C ~ 150°C
DLA20IM800PC-TRL DIODE GEN PURP 800V 20A TO263AA IXYS	3,104	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	800 V	20A	1.2 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 800 V	4pF @ 400V, 1MHz	-	-	Surface Mount	TO-263AA	-55°C ~ 175°C

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