Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
STTH30L06W DIODE GEN PURP 600V 30A DO247 STMicroelectronics	5,753	-	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	600 V	30A	1.55 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 600 V	-	-	-	Through Hole	DO-247	175°C (Max)
RHRG3060-F085 DIODE GEN PURP 600V 30A TO247-2 onsemi	3,716	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Avalanche	600 V	30A	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	250 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	TO-247-2	-55°C ~ 175°C
STTH3010GY-TR DIODE GEN PURP 1KV 30A D2PAK STMicroelectronics	4,325	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1000 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	15 µA @ 1000 V	-	Automotive	AEC-Q101	Surface Mount	D2PAK	-40°C ~ 175°C
STTH30R04W DIODE GEN PURP 400V 30A DO247 STMicroelectronics	4,474	-	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	400 V	30A	1.45 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	15 µA @ 400 V	-	-	-	Through Hole	DO-247	-40°C ~ 175°C
VS-20ETF06-M3 DIODE GEN PURP 600V 20A TO220AC Vishay General Semiconductor - Diodes Division	3,393	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	20A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	160 ns	100 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-40°C ~ 150°C
STBR3012G2-TR DIODE GP 1.2KV 30A D2PAK HV STMicroelectronics	3,548	-	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	30A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 1200 V	-	-	-	Surface Mount	D2PAK HV	175°C (Max)
STPSC10H065BY-TR DIODE SIL CARBIDE 650V 10A DPAK STMicroelectronics	4,560	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	-	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	480pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	DPAK	-40°C ~ 175°C
VS-20ETF10-M3 DIODE GEN PURP 1KV 20A TO220AC Vishay General Semiconductor - Diodes Division	3,156	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1000 V	20A	1.3 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	95 ns	100 µA @ 1000 V	-	-	-	Through Hole	TO-220AC	-40°C ~ 150°C
VS-8EWF04S-M3 DIODE GEN PURP 400V 8A DPAK Vishay General Semiconductor - Diodes Division	5,102	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tube	Active	Standard	400 V	8A	1.2 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	100 µA @ 400 V	-	-	-	Surface Mount	TO-252AA (DPAK)	-40°C ~ 150°C
STBR3012G2Y-TR DIODE GP 1.2KV 30A D2PAK HV STMicroelectronics	4,037	-	RFQ	Datasheet	ECOPACK®2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	1200 V	30A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	2 µA @ 1200 V	-	Automotive	AEC-Q101	Surface Mount	D2PAK HV	-40°C ~ 175°C
STTH3010PI DIODE GEN PURP 1KV 30A DOP3I STMicroelectronics	4,884	-	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	1000 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	15 µA @ 1000 V	-	-	-	Through Hole	DOP3I	175°C (Max)
1N5618 DIODE GEN PURP 600V 1A AXIAL Microchip Technology	3,306	-	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	-	-	Through Hole	A, Axial	-65°C ~ 200°C
BY16 DIODE GEN PURP 16000V 0.3A AXIAL Diotec Semiconductor	4,881	-	RFQ	Datasheet	-	Axial	Tape & Reel (TR)	Active	Standard	16000 V	300mA	15 V @ 300 mA	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	1 µA @ 16000 V	-	-	-	Through Hole	Axial	-50°C ~ 150°C
C3D06060G DIODE SIL CARB 600V 19A TO263-2 Wolfspeed, Inc.	5,485	-	RFQ	Datasheet	Z-Rec®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	SiC (Silicon Carbide) Schottky	600 V	19A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	295pF @ 0V, 1MHz	-	-	Surface Mount	TO-263-2	-55°C ~ 175°C
IDD06SG60CXTMA2 DIODE SIL CARB 600V 6A TO252-3 Infineon Technologies	3,779	-	RFQ	Datasheet	CoolSiC™+	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	600 V	6A	2.3 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 600 V	130pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO252-3	-55°C ~ 175°C
IDL08G65C5XUMA2 DIODE SIL CARBIDE 650V 8A VSON-4 Infineon Technologies	5,443	-	RFQ	Datasheet	CoolSiC™+	4-PowerTSFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	140 µA @ 650 V	250pF @ 1V, 1MHz	-	-	Surface Mount	PG-VSON-4	-55°C ~ 150°C
STTH3010W DIODE GEN PURP 1KV 30A DO247 STMicroelectronics	3,874	-	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	1000 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	15 µA @ 1000 V	-	-	-	Through Hole	DO-247	175°C (Max)
DSEP40-03AS-TRL DIODE GEN PURP 300V 40A TO263AA IXYS	3,044	-	RFQ	Datasheet	HiPerFRED™	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	300 V	40A	1.44 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 300 V	50pF @ 150V, 1MHz	-	-	Surface Mount	TO-263AA	-55°C ~ 175°C
DSI30-16AS-TUB DIODE GEN PURP 1.6KV 30A TO263AA IXYS	3,599	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	1600 V	30A	1.29 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1600 V	10pF @ 400V, 1MHz	-	-	Surface Mount	TO-263AA	-40°C ~ 175°C
STTH6004W DIODE GEN PURP 400V 60A DO247 STMicroelectronics	5,863	-	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	400 V	60A	1.2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	50 µA @ 400 V	-	-	-	Through Hole	DO-247	175°C (Max)

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