Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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WNSC2D2012006QWNSC2D201200/SOD59A/STANDARD MAR WeEn Semiconductors |
5,032 |
|
![]() Datasheet |
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- | TO-220-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 950pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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WNSC2D08650TJDIODE SIL CARBIDE 650V 8A 5DFN WeEn Semiconductors |
4,060 |
|
![]() Datasheet |
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- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C |
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BYC75W-1200PQDIODE GEN PURP 1.2KV 75A TO247-2 WeEn Semiconductors |
5,606 |
|
![]() Datasheet |
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- | TO-247-2 | Tube | Active | Standard | 1200 V | 75A | - | Fast Recovery =< 500ns, > 200mA (Io) | 85 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |
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WNSC2D201200W6QDIODE SIL CARB 1.2KV 20A TO247-2 WeEn Semiconductors |
5,107 |
|
![]() Datasheet |
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 20A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 845pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | 175°C |
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WNSC06650T6JDIODE SIL CARBIDE 650V 6A 5DFN WeEn Semiconductors |
3,882 |
|
![]() Datasheet |
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- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
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BYC100W-1200PQDIODE GP 1.2KV 100A TO247-2 WeEn Semiconductors |
4,266 |
|
![]() Datasheet |
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EEPP™ | TO-247-2 | Tube | Active | Standard | 1200 V | 100A | 3.3 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 90 ns | 250 µA @ 1200 V | - | - | - | Through Hole | TO-247-2 | 175°C (Max) |
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WNSC2D301200W6QWNSC2D301200W/TO247-2L/STANDARD WeEn Semiconductors |
3,458 |
|
![]() Datasheet |
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- | TO-247-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 30A | 1.6 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 150 µA @ 1200 V | 1407pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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WNSC2D401200W6QWNSC2D401200W/TO247-2L/STANDARD WeEn Semiconductors |
4,149 |
|
![]() Datasheet |
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- | TO-247-2 | Bulk | Active | SiC (Silicon Carbide) Schottky | 1200 V | 40A | 1.6 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 2068pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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WBST080SCM120CGALWWBST080SCM120CGAL/NAU000/NO MARK WeEn Semiconductors |
3,220 |
|
- |
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- | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
NXPLQSC10650QDIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors |
4,018 |
|
![]() Datasheet |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.85 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 230 µA @ 650 V | 250pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |