Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
RB058LB100TBR1 SUPER LOW IR, 100V 3A, SMBP, SCH Rohm Semiconductor	3,234	-	RFQ	Datasheet	-	DO-214AA, SMB	Tape & Reel (TR)	Active	Schottky	100 V	3A	840 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 µA @ 100 V	-	-	-	Surface Mount	SMBP	175°C
SFAF806G DIODE GEN PURP 400V 8A ITO220AC Taiwan Semiconductor Corporation	4,075	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	400 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	60pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
GPA806 DIODE GEN PURP 800V 8A TO220AC Taiwan Semiconductor Corporation	4,673	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	800 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	50pF @ 4V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
GPA806H 8A, 800V, STANDARD RECOVERY RECT Taiwan Semiconductor Corporation	5,140	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	800 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 800 V	50pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 150°C
SFAF806GH 35NS, 8A, 400V, SUPER FAST RECOV Taiwan Semiconductor Corporation	5,680	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	400 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	60pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
GPA805H DIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation	3,979	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	50pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-55°C ~ 150°C
GPA807 DIODE GEN PURP 1KV 8A TO220AC Taiwan Semiconductor Corporation	5,856	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1000 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	50pF @ 4V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
PNU650200EJ-QJ 650V, 20A ULTRAFAST RECOVERY REC Nexperia USA Inc.	5,343	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), Variant	Tape & Reel (TR)	Active	Standard	650 V	20A	1.55 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	5 µA @ 650 V	13pF @ 400V, 1MHz	Automotive	AEC-Q101	Surface Mount	D2PAK R2P	175°C
NRVTS15100PFST3G DIODE SCHOTTKY 100V 15A TO277-3 onsemi	3,146	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	100 V	15A	810 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	1150pf @ 1V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-277-3	-55°C ~ 175°C
V20PL63HM3/H 20A, 60V, SMPC TRENCH SKY RECT. Vishay General Semiconductor - Diodes Division	5,702	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	60 V	20A	640 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	600 µA @ 60 V	3400pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-277A (SMPC)	-40°C ~ 150°C
MUR8L60 DIODE GEN PURP 600V 8A TO220AC Taiwan Semiconductor Corporation	4,071	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	8A	1.3 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	5 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
SDUR15U120 ULTRAFAST RECTIFIER 1200V 15A TO SMC Diode Solutions	3,250	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1200 V	15A	3.2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	100 µA @ 1200 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
HERAF1008G DIODE GEN PURP 1KV 10A ITO220AC Taiwan Semiconductor Corporation	4,036	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	1000 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 1000 V	60pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1004G DIODE GEN PURP 300V 10A ITO220AC Taiwan Semiconductor Corporation	4,432	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	300 V	10A	1 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 300 V	80pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1007GH 80NS, 10A, 800V, HIGH EFFICIENT Taiwan Semiconductor Corporation	4,053	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	800 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 800 V	60pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
HERAF1008GH 80NS, 10A, 1000V, HIGH EFFICIENT Taiwan Semiconductor Corporation	3,966	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	1000 V	10A	1.7 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	80 ns	10 µA @ 1000 V	60pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
SF2006G DIODE GEN PURP 400V 20A TO220AB Taiwan Semiconductor Corporation	4,675	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	Standard	400 V	20A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 400 V	80pF @ 4V, 1MHz	-	-	Through Hole	TO-220AB	-55°C ~ 150°C
V20PWM63HM3/I DIODE SCHOTTKY 60V 20A SLIMDPAK Vishay General Semiconductor - Diodes Division	5,474	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Schottky	60 V	20A	670 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	35 µA @ 60 V	3000pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	SlimDPAK	-40°C ~ 175°C
SFAF1004G DIODE GEN PURP 200V 10A ITO220AC Taiwan Semiconductor Corporation	4,345	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	200 V	10A	975 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	170pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
UG5J DIODE GEN PURP 600V 5A TO220AC Taiwan Semiconductor Corporation	5,306	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	600 V	5A	3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	30 µA @ 600 V	-	-	-	Through Hole	TO-220AC	-55°C ~ 150°C

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