Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
VFT3080S-E3/4W DIODE SCHOTTKY 80V 30A TO220-3 Vishay General Semiconductor - Diodes Division	5,639	-	RFQ	Datasheet	-	TO-220-3	Tube	Active	Schottky	80 V	30A	950 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 80 V	-	-	-	Through Hole	TO-220-3	-55°C ~ 150°C
MURB15120L-TP SUPER FAST RECOVERY RECTIFIER Micro Commercial Co	4,658	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	1200 V	15A	3.2 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	5 µA @ 1200 V	55pF @ 4V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 150°C
SFF2004G DIODE GEN PURP 200V 20A ITO220AB Taiwan Semiconductor Corporation	3,374	-	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	Standard	200 V	20A	975 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	90pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AB	-55°C ~ 150°C
SBR10U200P5-13D Super Barrier Rectifier PDI5 T&R Diodes Incorporated	5,898	-	RFQ	Datasheet	-	PowerDI™ 5	Tape & Reel (TR)	Active	Super Barrier	200 V	10A	880 mV @ 10 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 200 V	-	-	-	Surface Mount	PowerDI™ 5	-65°C ~ 175°C
SFF2006GH DIODE GEN PURP 400V 20A ITO220AB Taiwan Semiconductor Corporation	4,363	-	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	Standard	400 V	20A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	90pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AB	-55°C ~ 150°C
SFF2006G DIODE GEN PURP 400V 20A ITO220AB Taiwan Semiconductor Corporation	4,122	-	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	Standard	400 V	20A	1.3 V @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 400 V	90pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AB	-55°C ~ 150°C
DSC06C065D1-13 SILICON CARBIDE RECTIFIER TO252 Diodes Incorporated	4,525	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 650 V	184pF @ 100mV, 1MHz	-	-	Surface Mount	TO-252 (Type WX)	-55°C ~ 175°C
DSC04A065D1-13 SILICON CARBIDE RECTIFIER TO252 Diodes Incorporated	4,255	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	4A	1.5 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 650 V	184pF @ 100mV, 1MHz	-	-	Surface Mount	TO-252 (Type WX)	-55°C ~ 175°C
SR1504 DIODE SCHOTTKY 40V 15A R-6 Taiwan Semiconductor Corporation	4,701	-	RFQ	Datasheet	-	R-6, Axial	Tape & Reel (TR)	Not For New Designs	Schottky	40 V	15A	550 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	-	-	Through Hole	R-6	-50°C ~ 150°C
SFAF1604G DIODE GEN PURP 200V 16A ITO220AC Taiwan Semiconductor Corporation	4,742	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	200 V	16A	975 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	130pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
TRS2E65H,S1Q G3 SIC-SBD 650V 2A TO-220-2L Toshiba Semiconductor and Storage	3,604	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	2A	1.35 V @ 2 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	135pF @ 1V, 1MHz	-	-	Through Hole	TO-220-2L	175°C
RFN6RSM2STFTL1 200V 6A 14NS, TO-277A, ULTRA FAS Rohm Semiconductor	3,796	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Standard	200 V	6A	930 mV @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 200 V	-	Automotive	AEC-Q101	Surface Mount	TO-277A	175°C
BYW76RAS15-10 DIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division	5,168	-	RFQ	Datasheet	-	-	Bulk	Active	Avalanche	600 V	3A	1.1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 600 V	-	-	-	-	-	-55°C ~ 175°C
YQ10RSM10SDTL1 TRENCH MOS STRUCTURE, 100V, 10A, Rohm Semiconductor	5,450	-	RFQ	Datasheet	-	TO-277, 3-PowerDFN	Tape & Reel (TR)	Active	Schottky	100 V	10A	670 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 100 V	-	-	-	Surface Mount	TO-277A	150°C
SFAF1608GH DIODE GEN PURP 600V 16A ITO220AC Taiwan Semiconductor Corporation	5,745	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	16A	1.7 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	100pF @ 4V, 1MHz	Automotive	AEC-Q101	Through Hole	ITO-220AC	-55°C ~ 150°C
SFAF1608G DIODE GEN PURP 600V 16A ITO220AC Taiwan Semiconductor Corporation	3,375	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Active	Standard	600 V	16A	1.7 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 600 V	100pF @ 4V, 1MHz	-	-	Through Hole	ITO-220AC	-55°C ~ 150°C
RB078BM30SFHHTL 30V 5A, TO-252, ULTRA LOW IR SBD Rohm Semiconductor	5,645	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	Schottky	30 V	5A	720 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 µA @ 30 V	-	Automotive	AEC-Q101	Surface Mount	TO-252	175°C
SFS1604G DIODE GEN PURP 200V 16A TO263AB Taiwan Semiconductor Corporation	3,094	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	200 V	16A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	-	-	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 150°C
SFS1604GH DIODE GEN PURP 200V 16A TO263AB Taiwan Semiconductor Corporation	4,538	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	200 V	16A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	80pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	TO-263AB (D2PAK)	-55°C ~ 150°C
P2000MTL DIODE GEN PURP 1000V 20A P600 Diotec Semiconductor	4,406	-	RFQ	Datasheet	-	P600, Axial	Cut Tape (CT)	Active	Standard	1000 V	20A	1.1 V @ 20 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	10 µA @ 1000 V	-	-	-	Through Hole	P-600	-50°C ~ 175°C

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