Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
FX2000G DIODE GEN PURP 400V 20A P600 Diotec Semiconductor	3,640	-	RFQ	Datasheet	-	P600, Axial	Cut Tape (CT)	Active	Standard	400 V	20A	940 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 400 V	-	-	-	Through Hole	P600	-50°C ~ 150°C
VS-8ETH06S-M3 DIODE GEN PURP 600V 8A TO263AB Vishay General Semiconductor - Diodes Division	4,026	-	RFQ	Datasheet	FRED Pt®	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	600 V	8A	2.4 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	50 µA @ 600 V	-	-	-	Surface Mount	TO-263AB (D2PAK)	-65°C ~ 175°C
ST40250 250V, 40A, TO-220AC, ULTRA LOW V SMC Diode Solutions	3,211	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Schottky	250 V	40A	1 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	250 µA @ 250 V	690pF @ 5V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 150°C
STPS30SM120SFP DIODE SCHOTT 120V 30A TO220FPAB STMicroelectronics	3,976	-	RFQ	Datasheet	ECOPACK®2	TO-220-3 Full Pack	Tube	Active	Schottky	120 V	30A	950 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	275 µA @ 120 V	-	-	-	Through Hole	TO-220FPAB	150°C (Max)
MBR60200W 200V, 60A, TO-247AC, DIODE SCHOT SMC Diode Solutions	4,248	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Schottky	200 V	75A	900 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 200 V	2000pF @ 5V, 1MHz	-	-	Through Hole	TO-247AC	-55°C ~ 150°C
STPS20L15D DIODE SCHOTTKY 15V 20A TO220AC STMicroelectronics	3,310	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Schottky	15 V	20A	410 mV @ 19 A	Fast Recovery =< 500ns, > 200mA (Io)	-	6 mA @ 15 V	-	-	-	Through Hole	TO-220AC	125°C (Max)
P2500MH 25A, 1000V, STANDARD RECOVERY RE Taiwan Semiconductor Corporation	3,807	-	RFQ	Datasheet	-	DO-201AD, Axial	Tape & Reel (TR)	Active	Standard	1000 V	25A	870 mV @ 5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	-	Automotive	AEC-Q101	Through Hole	DO-201AD	-55°C ~ 175°C
P2500M 25A, 1000V, STANDARD RECOVERY RE Taiwan Semiconductor Corporation	3,105	-	RFQ	Datasheet	-	DO-201AD, Axial	Tape & Reel (TR)	Active	Standard	1000 V	25A	870 mV @ 5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1000 V	-	Automotive	AEC-Q101	Through Hole	DO-201AD	-55°C ~ 175°C
1N5616 DIODE GEN PURP 400V 1A AXIAL Microchip Technology	4,108	-	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	400 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 400 V	-	-	-	Through Hole	A, Axial	-65°C ~ 200°C
IDP30E120XKSA1 DIODE GP 1.2KV 50A TO220-2-2 Infineon Technologies	5,222	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	Standard	1200 V	50A	2.15 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	243 ns	100 µA @ 1200 V	-	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 150°C
IDH08G65C6XKSA1 DIODE SIL CARB 650V 20A TO220-2 Infineon Technologies	4,786	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	20A	1.35 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	27 µA @ 420 V	401pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2	-55°C ~ 175°C
VS-45EPS16LHM3 DIODE GEN PURP 1.6KV 45A TO247AD Vishay General Semiconductor - Diodes Division	5,264	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1600 V	45A	1.16 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	Automotive	AEC-Q101	Through Hole	TO-247AD	-40°C ~ 150°C
STTH1512PI DIODE GEN PURP 1.2KV 15A DOP3I STMicroelectronics	5,963	-	RFQ	Datasheet	-	DOP3I-2 Insulated (Straight Leads)	Tube	Active	Standard	1200 V	15A	2.1 V @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	105 ns	15 µA @ 1200 V	-	-	-	Through Hole	DOP3I	175°C (Max)
IDH12G65C6XKSA1 DIODE SIL CARB 650V 27A TO220-2 Infineon Technologies	5,022	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	27A	1.35 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 420 V	594pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2	-55°C ~ 175°C
JANTX1N5620 DIODE GEN PURP 800V 1A AXIAL Microchip Technology	4,221	-	RFQ	Datasheet	-	A, Axial	Bulk	Active	Standard	800 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 800 V	-	Military	MIL-PRF-19500/427	Through Hole	A, Axial	-65°C ~ 200°C
JANTX1N5551 DIODE GEN PURP 400V 5A AXIAL Microchip Technology	3,041	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	400 V	5A	1.2 V @ 9 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	1 µA @ 400 V	-	Military	MIL-PRF-19500/420	Through Hole	B, Axial	-65°C ~ 175°C
1N5711 DIODE SCHOTTKY 70V 33MA DO35 Microchip Technology	5,543	-	RFQ	-	-	DO-204AH, DO-35, Axial	Bulk	Active	Schottky	70 V	33mA	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	-65°C ~ 150°C
VS-40HFR40 DIODE GEN PURP 400V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,588	-	RFQ	Datasheet	-	DO-203AB, DO-5, Stud	Bulk	Active	Standard, Reverse Polarity	400 V	40A	1.3 V @ 125 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 400 V	-	-	-	Chassis, Stud Mount	DO-203AB (DO-5)	-65°C ~ 190°C
JANTX1N5809 DIODE GEN PURP 100V 3A AXIAL Microchip Technology	4,312	-	RFQ	Datasheet	-	B, Axial	Bulk	Active	Standard	100 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	Military	MIL-PRF-19500/477	Through Hole	B, Axial	-65°C ~ 175°C
1N5618US DIODE GEN PURP 600V 1A D-5A Microchip Technology	4,799	-	RFQ	Datasheet	-	SQ-MELF, A	Bulk	Active	Standard	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	500 nA @ 600 V	-	-	-	Surface Mount	D-5A	-65°C ~ 200°C

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