Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FR103BULKDIODE GEN PURP 200V 1A DO41 EIC SEMICONDUCTOR INC. |
3,979 |
|
![]() Datasheet |
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- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 200 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 200 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
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FR106BULKDIODE GEN PURP 800V 1A DO41 EIC SEMICONDUCTOR INC. |
3,883 |
|
![]() Datasheet |
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- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 800 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 5 µA @ 800 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
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BA159BULKDIODE GEN PURP 1KV 1A DO41 EIC SEMICONDUCTOR INC. |
4,478 |
|
![]() Datasheet |
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- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 1000 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 1000 V | 20pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
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SF13-BULKDIODE GEN PURP 150V 1A DO41 EIC SEMICONDUCTOR INC. |
4,742 |
|
![]() Datasheet |
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- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 150 V | 1A | 950 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 5 µA @ 150 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
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BA158BULKDIODE GEN PURP 600V 1A DO41 EIC SEMICONDUCTOR INC. |
4,275 |
|
![]() Datasheet |
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- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 600 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 5 µA @ 600 V | 20pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
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FR105BULKDIODE GEN PURP 600V 1A DO41 EIC SEMICONDUCTOR INC. |
4,149 |
|
![]() Datasheet |
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- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 600 V | 1A | 1.3 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 5 µA @ 600 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
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HER101BULKDIODE GEN PURP 50V 1A DO41 EIC SEMICONDUCTOR INC. |
4,922 |
|
![]() Datasheet |
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- | DO-204AL, DO-41, Axial | Bag | Active | Standard | 50 V | 1A | 1.1 V @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 50 ns | 5 µA @ 50 V | 50pF @ 4V, 1MHz | - | - | Through Hole | DO-41 | -65°C ~ 150°C |
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FR303BULKDIODE GEN PURP 200V 3A DO201AD EIC SEMICONDUCTOR INC. |
3,159 |
|
![]() Datasheet |
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- | DO-201AD, Axial | Bag | Active | Standard | 200 V | 3A | 1.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 10 µA @ 200 V | 60pF @ 4V, 1MHz | - | - | Through Hole | DO-201AD | -65°C ~ 150°C |
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BYD13MBULKDIODE AVALANCHE 1KV 1.4A DO41 EIC SEMICONDUCTOR INC. |
4,034 |
|
![]() Datasheet |
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- | DO-204AL, DO-41, Axial | Bag | Active | Avalanche | 1000 V | 1.4A | 1.05 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 1000 V | - | - | - | Through Hole | DO-41 | 175°C |
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BYD13GBULKDIODE AVALANCHE 400V 1.4A DO41 EIC SEMICONDUCTOR INC. |
4,690 |
|
![]() Datasheet |
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- | DO-204AL, DO-41, Axial | Bag | Active | Avalanche | 400 V | 1.4A | 1.05 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 1 µA @ 400 V | - | - | - | Through Hole | DO-41 | 175°C |