Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
S3D06065L DIODE SCHOTTKY 650V 24A 5DFN SMC Diode Solutions	4,212	-	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	24A	1.7 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	-	3 µA @ 650 V	382pF @ 0V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	-55°C ~ 175°C
S3D10065M DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions	5,989	-	RFQ	Datasheet	-	8-PowerVDFN	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	36A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	-	40 µA @ 650 V	727pF @ 0V, 1MHz	-	-	Surface Mount	8-PDFNWB (5x6)	-55°C ~ 175°C
STPS30SM100SR DIODE SCHOTTKY 100V 30A I2PAK STMicroelectronics	5,306	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	Schottky	100 V	30A	870 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	45 µA @ 100 V	-	-	-	Through Hole	I2PAK	150°C (Max)
SICRF10650CT DIODE SIL CARB 650V 5A ITO220AB SMC Diode Solutions	5,563	-	RFQ	Datasheet	-	TO-220-3 Full Pack, Isolated Tab	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	-	-	-	Through Hole	ITO-220AB	-55°C ~ 175°C
STTH31AC06SPF DIODE GEN PURP 600V 30A TO3PF STMicroelectronics	5,895	-	RFQ	Datasheet	-	TO-3P-3 Full Pack	Tube	Active	Standard	600 V	30A	2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-3PF	175°C (Max)
ASZD020120C 1200V,20A SILICON CARBIDE SCHOTT ANBON SEMICONDUCTOR (INT'L) LIMITED	3,788	-	RFQ	-	*	-	Tape & Reel (TR)	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
STPS30M100SR DIODE SCHOTTKY 100V 30A I2PAK STMicroelectronics	4,257	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	Schottky	100 V	30A	800 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	175 µA @ 100 V	-	-	-	Through Hole	I2PAK	150°C (Max)
STPS20M100SR DIODE SCHOTTKY 100V 20A I2PAK STMicroelectronics	3,918	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	Schottky	100 V	20A	850 mV @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	-	40 µA @ 100 V	-	-	-	Through Hole	I2PAK	150°C (Max)
STPS30M60SR DIODE SCHOTTKY 60V 30A I2PAK STMicroelectronics	3,822	-	RFQ	Datasheet	-	TO-262-3 Long Leads, I2PAK, TO-262AA	Tube	Obsolete	Schottky	60 V	30A	590 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	165 µA @ 60 V	-	-	-	Through Hole	I2PAK	150°C (Max)
RHRP30120 DIODE GP 1.2KV 30A TO220-2L onsemi	4,356	-	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	Standard	1200 V	30A	3.2 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-220-2L	-65°C ~ 175°C
CDBJSC5650-G DIODE SIL CARBIDE 650V 5A TO220F Comchip Technology	4,312	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	430pF @ 0V, 1MHz	-	-	Through Hole	TO-220F	-55°C ~ 175°C
UF27520070A1.T DIODE GEN PURP 200V 90A DIE SMC Diode Solutions	5,493	-	RFQ	Datasheet	-	Die	Tray	Active	Standard	200 V	90A	1 V @ 90 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	60 µA @ 200 V	-	-	-	Surface Mount	Die	150°C (Max)
STTH30ST06WY DIODE GEN PURP 600V 30A DO247 STMicroelectronics	5,530	-	RFQ	Datasheet	-	DO-247-2 (Straight Leads)	Tube	Active	Standard	600 V	30A	3.6 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	50 µA @ 600 V	-	Automotive	AEC-Q101	Through Hole	DO-247	-40°C ~ 175°C
STPSC8065DY DIODE SIL CARB 650V 8A TO220AC STMicroelectronics	5,168	-	RFQ	Datasheet	ECOPACK®2	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	8A	1.45 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	105 µA @ 650 V	540pF @ 0V, 1MHz	Automotive	AEC-Q101	Through Hole	TO-220AC	-40°C ~ 175°C
SCS312AHGC9 DIODE SIL CARB 650V 12A TO220ACP Rohm Semiconductor	3,250	-	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	12A	-	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	600pF @ 1V, 1MHz	-	-	Through Hole	TO-220ACP	175°C (Max)
RURU10060RA 100A, 600V ULTRAFAST DIODE Harris Corporation	3,747	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
S4D10120L1 DIODE SIL CARBIDE 1.2KV 10A 5DFN SMC Diode Solutions	5,987	-	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	772pF @ 0V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	-55°C ~ 175°C
SCS220AMC DIODE SIL CARB 650V 20A TO220FM Rohm Semiconductor	3,689	-	RFQ	Datasheet	-	TO-220-2 Full Pack	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 600 V	730pF @ 1V, 1MHz	-	-	Through Hole	TO-220FM	175°C (Max)
VS-100BGQ045 DIODE SCHOTTKY 45V 100A POWIRTAB Vishay General Semiconductor - Diodes Division	3,489	-	RFQ	Datasheet	-	PowerTab™, PowIRtab™	Bulk	Obsolete	Schottky	45 V	100A	730 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-	-	-	Chassis Mount	PowIRtab™	-55°C ~ 150°C
SCS208AJTLL DIODE SIL CARB 650V 8A TO263AB Rohm Semiconductor	3,379	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.55 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	160 µA @ 600 V	291pF @ 1V, 1MHz	-	-	Surface Mount	TO-263AB	175°C (Max)

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