Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
1N4938 DIODE GEN PURP 200V 500MA DO35 Fairchild Semiconductor	3,109	-	RFQ	Datasheet	-	DO-204AH, DO-35, Axial	Bulk	Obsolete	Standard	200 V	500mA	1 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 75 V	5pF @ 0V, 1MHz	-	-	Through Hole	DO-204AH (DO-35)	175°C (Max)
STPSC6H065BY-TR DIODE SIL CARBIDE 650V 6A DPAK STMicroelectronics	5,271	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	6A	-	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 650 V	300pF @ 0V, 1MHz	Automotive	AEC-Q101	Surface Mount	DPAK	-40°C ~ 175°C
IDK10G65C5XTMA1 DIODE SIL CARB 650V 10A TO263-2 Infineon Technologies	5,027	-	RFQ	Datasheet	CoolSiC™+	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Discontinued at Digi-Key	SiC (Silicon Carbide) Schottky	650 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	1.7 mA @ 650 V	300pF @ 1V, 1MHz	-	-	Surface Mount	PG-TO263-2	-55°C ~ 175°C
WNSC2D08650DJ DIODE SIL CARBIDE 650V 8A DPAK WeEn Semiconductors	3,319	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	260pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C
BYQ60W-600PT2Q DIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors	4,517	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C
BYV60W-600PT2Q DIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors	3,627	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	1.7 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	79 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C
SCS304APC9 DIODE SILICON CARBIDE 650V 4A Rohm Semiconductor	4,587	-	RFQ	Datasheet	-	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	650 V	4A	1.5 V @ 4 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	200pF @ 1V, 1MHz	-	-	Through Hole	-	175°C (Max)
RFUS20NS4STL DIODE GEN PURP 430V 20A LPDS Rohm Semiconductor	3,053	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Standard	430 V	20A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	-	-	Surface Mount	LPDS	150°C (Max)
RBQ30NS45BTL DIODE SCHOTTKY 45V 30A LPDS Rohm Semiconductor	4,504	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	Schottky	45 V	30A	590 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 45 V	-	-	-	Surface Mount	LPDS	150°C
WNSC2D10650Q DIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors	4,359	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C
MUR3040 DIODE GEN PURP 400V 15A TO218 onsemi	5,285	-	RFQ	Datasheet	-	TO-218-2	Bulk	Active	Standard	400 V	30A	1.5 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	35 µA @ 400 V	175pF @ 4V, 1MHz	-	-	Through Hole	TO-218	-65°C ~ 175°C
SDT05S60 DIODE SIL CARB 600V 5A TO220-2 Infineon Technologies	4,346	-	RFQ	Datasheet	CoolSiC™+	TO-220-2	Tube	Obsolete	SiC (Silicon Carbide) Schottky	600 V	5A	1.7 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 600 V	170pF @ 1V, 1MHz	-	-	Through Hole	PG-TO220-2-2	-55°C ~ 175°C
RHRU5060 DIODE AVALANCHE 600V 50A TO218 Harris Corporation	5,875	-	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	600 V	50A	2.1 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	500 µA @ 600 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
WNSC6D166506Q DIODE SIL CARB 650V 16A TO220AC WeEn Semiconductors	4,337	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	16A	1.45 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	780pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	175°C
RURG8080 DIODE AVALANCHE 800V 80A TO247-2 Harris Corporation	4,060	-	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Avalanche	800 V	80A	1.9 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	500 µA @ 800 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
RURG8070 DIODE AVALANCHE 700V 80A TO247-2 Harris Corporation	4,292	-	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Avalanche	700 V	80A	1.9 V @ 80 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	500 µA @ 700 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
BYC30W-600PT2Q DIODE GEN PURP 600V 30A TO247-2 WeEn Semiconductors	3,277	-	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Standard	600 V	30A	2.75 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	34 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C (Max)
PSDH60120L1_T0_00001 TO-247AD-2LD, FAST Panjit International Inc.	3,513	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	60A	2.5 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	330 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247AD-2	-55°C ~ 150°C
S3D08065L DIODE SIL CARBIDE 650V 24A 5DFN SMC Diode Solutions	4,733	-	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	24A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 650 V	650pF @ 0V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	-55°C ~ 175°C
BYC30W-1200PQ DIODE GEN PURP 1.2KV 30A TO247-2 WeEn Semiconductors	4,123	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	1200 V	30A	3.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	65 ns	250 µA @ 1200 V	-	-	-	Through Hole	TO-247-2	175°C (Max)

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