Single Diodes

Mfr. Part #	Availability	Price	Quantity	Datasheet	Series	Package/Case	Packaging	Product Status	Technology	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Grade	Qualification	Mounting Type	Supplier Device Package	Operating Temperature - Junction
APT30D60SG DIODE GEN PURP 600V 30A D3 Microchip Technology	5,088	-	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	85 ns	250 µA @ 600 V	-	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
V30K170HM3/H DIODE SCHOTTKY 170V 3.4A FLATPAK Vishay General Semiconductor - Diodes Division	3,370	-	RFQ	Datasheet	-	8-PowerTDFN	Tape & Reel (TR)	Discontinued at Digi-Key	Schottky	170 V	3.4A	1.04 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 170 V	1250pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	FlatPAK (5x6)	-40°C ~ 165°C
V35PW22HM3/I DIODE SCHOTTKY 200V 35A SLIMDPAK Vishay General Semiconductor - Diodes Division	4,589	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Discontinued at Digi-Key	Schottky	200 V	35A	990 mV @ 35 A	Fast Recovery =< 500ns, > 200mA (Io)	-	350 µA @ 200 V	1320pF @ 4V, 1MHz	Automotive	AEC-Q101	Surface Mount	SlimDPAK	-40°C ~ 175°C
RURU50120 DIODE AVALANCHE 1.2KV 50A TO218 Harris Corporation	3,834	-	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	1200 V	50A	2.1 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	500 µA @ 1200 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
BYC60W-600PQ DIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors	5,405	-	RFQ	Datasheet	-	TO-247-2	Tube	Active	Standard	600 V	60A	2.6 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 600 V	-	-	-	Through Hole	TO-247-2	175°C (Max)
TRS8V65H,LQ G3 SIC-SBD 650V 8A DFN8X8 Toshiba Semiconductor and Storage	3,521	-	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	8A	1.35 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	90 µA @ 650 V	520pF @ 1V, 1MHz	-	-	Surface Mount	4-DFN-EP (8x8)	175°C
RHRU50120 DIODE AVALANCHE 1.2KV 50A TO218 Harris Corporation	4,393	-	RFQ	Datasheet	-	TO-218-1	Bulk	Active	Avalanche	1200 V	50A	3.2 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	500 µA @ 1200 V	-	-	-	Chassis Mount	TO-218	-65°C ~ 175°C
RHRU501200 RECTIFIER DIODE, AVALANCHE Harris Corporation	5,399	-	RFQ	Datasheet	*	-	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
WNSC2D10650DJ DIODE SIL CARBIDE 650V 10A DPAK WeEn Semiconductors	4,818	-	RFQ	Datasheet	-	TO-252-3, DPAK (2 Leads + Tab), SC-63	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	310pF @ 1V, 1MHz	-	-	Surface Mount	DPAK	175°C
S3D10065L DIODE SIL CARBIDE 650V 31A 5DFN SMC Diode Solutions	4,890	-	RFQ	Datasheet	-	4-VSFN Exposed Pad	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	31A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 650 V	787pF @ 0V, 1MHz	-	-	Surface Mount	5-DFN (8x8)	-55°C ~ 175°C
S3D12065G DIODE SIL CARBIDE 650V 35A D2PAK SMC Diode Solutions	3,999	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tape & Reel (TR)	Active	SiC (Silicon Carbide) Schottky	650 V	35A	1.7 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	16 µA @ 650 V	764pF @ 0V, 1MHz	-	-	Surface Mount	D2PAK	-55°C ~ 175°C
RHRG3040 DIODE AVALANCHE 400V 30A TO247-2 Harris Corporation	5,324	-	RFQ	Datasheet	-	TO-247-2	Bulk	Active	Avalanche	400 V	30A	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	250 µA @ 400 V	-	-	-	Through Hole	TO-247-2	-65°C ~ 175°C
RHRG7570 DIODE AVALANCHE 700V 75A TO247 Harris Corporation	5,623	-	RFQ	Datasheet	-	TO-247-3	Bulk	Active	Avalanche	700 V	75A	3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	500 µA @ 700 V	-	-	-	Through Hole	TO-247	-65°C ~ 175°C
RHRG75100 DIODE AVALANCHE 1KV 75A TO247 Harris Corporation	3,139	-	RFQ	Datasheet	-	TO-247-3	Bulk	Active	Avalanche	1000 V	75A	3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	100 ns	500 µA @ 1000 V	-	-	-	Through Hole	TO-247	-65°C ~ 175°C
WNSC6D10650Q DIODE SIL CARB 650V 10A TO220AC WeEn Semiconductors	4,830	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.45 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	500pF @ 1V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
APT60DQ60SG DIODE GEN PURP 60A D3PAK Microchip Technology	5,732	-	RFQ	Datasheet	-	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Tube	Active	Standard	-	60A	2.4 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	25 µA @ 600 V	-	-	-	Surface Mount	D3PAK	-55°C ~ 175°C
RURG3080 DIODE AVALANCHE 800V 30A TO247 Harris Corporation	5,169	-	RFQ	Datasheet	-	TO-247-3	Bulk	Active	Avalanche	800 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	500 µA @ 800 V	-	-	-	Through Hole	TO-247	-65°C ~ 175°C
1N4246 DIODE GEN PURP 400V 1A AXIAL Harris Corporation	5,650	-	RFQ	Datasheet	-	Axial	Bulk	Active	Standard	400 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 400 V	-	-	-	Through Hole	Axial	-65°C ~ 175°C
SICR10650 DIODE SIL CARB 650V 10A TO220AC SMC Diode Solutions	3,743	-	RFQ	Datasheet	-	TO-220-2	Tube	Active	SiC (Silicon Carbide) Schottky	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	695pF @ 0V, 1MHz	-	-	Through Hole	TO-220AC	-55°C ~ 175°C
PSDB3060S1_T0_00001 TO-263, FRED Panjit International Inc.	4,765	-	RFQ	Datasheet	-	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Tube	Active	Standard	600 V	30A	2.3 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	250 µA @ 600 V	-	-	-	Surface Mount	TO-263	-55°C ~ 150°C

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