Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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CRS12(TE85L,Q,M)DIODE SCHOTTKY 60V 1A S-FLAT Toshiba Semiconductor and Storage |
3,191 |
|
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- | SOD-123F | Tape & Reel (TR) | Active | Schottky | 60 V | 1A | 580 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 60 V | - | - | - | Surface Mount | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
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CMS21(TE12L,Q,M)X35 PB-F DIODE M-FLAT MOQ=3000 V Toshiba Semiconductor and Storage |
4,978 |
|
- |
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- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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CMS10I40A(TE12L,QMDIODE SCHOTTKY 40V 1A M-FLAT Toshiba Semiconductor and Storage |
5,081 |
|
![]() Datasheet |
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- | SOD-128 | Tape & Reel (TR) | Active | Schottky | 40 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 62pF @ 10V, 1MHz | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C (Max) |
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CMS20I40A(TE12L,QMDIODE SCHOTTKY 40V 2A M-FLAT Toshiba Semiconductor and Storage |
4,583 |
|
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- | SOD-128 | Tape & Reel (TR) | Active | Schottky | 40 V | 2A | 520 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 62pF @ 10V, 1MHz | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C (Max) |
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CMS20I30A(TE12L,QMDIODE SCHOTTKY 30V 2A M-FLAT Toshiba Semiconductor and Storage |
3,484 |
|
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- | SOD-128 | Tape & Reel (TR) | Active | Schottky | 30 V | 2A | 450 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 30 V | 82pF @ 10V, 1MHz | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C (Max) |
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CMS15I40A(TE12L,QMDIODE SCHOTTKY 40V 1.5A M-FLAT Toshiba Semiconductor and Storage |
3,880 |
|
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- | SOD-128 | Tape & Reel (TR) | Active | Schottky | 40 V | 1.5A | 490 mV @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 62pF @ 10V, 1MHz | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C (Max) |
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CMS30I40A(TE12L,QMDIODE SCHOTTKY 40V 3A M-FLAT Toshiba Semiconductor and Storage |
4,419 |
|
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- | SOD-128 | Tape & Reel (TR) | Active | Schottky | 40 V | 3A | 550 mV @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | 62pF @ 10V, 1MHz | - | - | Surface Mount | M-FLAT (2.4x3.8) | 150°C (Max) |
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TRS3E65H,S1QG3 SIC-SBD 650V 3A TO-220-2L Toshiba Semiconductor and Storage |
3,954 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 3A | 1.35 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 45 µA @ 650 V | 199pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
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TRS2E65H,S1QG3 SIC-SBD 650V 2A TO-220-2L Toshiba Semiconductor and Storage |
3,604 |
|
![]() Datasheet |
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 2A | 1.35 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 135pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
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TRS4V65H,LQG3 SIC-SBD 650V 4A DFN8X8 Toshiba Semiconductor and Storage |
4,413 |
|
![]() Datasheet |
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- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.34 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 650 V | 263pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |