Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
CCS15S40,L3FDIODE SCHOTTKY 40V 1.5A CST2C Toshiba Semiconductor and Storage |
5,927 |
|
![]() Datasheet |
![]() |
- | 2-SMD, No Lead | Tape & Reel (TR) | Obsolete | Schottky | 40 V | 1.5A | 550 mV @ 1.5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200 µA @ 40 V | 170pF @ 0V, 1MHz | - | - | Surface Mount | CST2C | 125°C (Max) |
![]() |
CRG05(TE85L,Q,M)DIODE GEN PURP 800V 1A S-FLAT Toshiba Semiconductor and Storage |
5,984 |
|
![]() Datasheet |
![]() |
- | SOD-123F | Tape & Reel (TR) | Last Time Buy | Standard | 800 V | 1A | 1.2 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 800 V | - | - | - | Surface Mount | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
![]() |
CRF02(TE85L,Q,M)DIODE GEN PURP 800V 500MA S-FLAT Toshiba Semiconductor and Storage |
4,317 |
|
![]() Datasheet |
![]() |
- | SOD-123F | Tape & Reel (TR) | Last Time Buy | Standard | 800 V | 500mA | 3 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 800 V | - | - | - | Surface Mount | S-FLAT (1.6x3.5) | -40°C ~ 150°C |
![]() |
CMF03(TE12L,Q,M)DIODE GEN PURP 900V 500MA M-FLAT Toshiba Semiconductor and Storage |
4,316 |
|
![]() Datasheet |
![]() |
- | SOD-128 | Tape & Reel (TR) | Last Time Buy | Standard | 900 V | 500mA | 2.5 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 900 V | - | - | - | Surface Mount | M-FLAT (2.4x3.8) | -40°C ~ 125°C |
![]() |
TRS8V65H,LQG3 SIC-SBD 650V 8A DFN8X8 Toshiba Semiconductor and Storage |
3,521 |
|
![]() Datasheet |
![]() |
- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.35 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 520pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
![]() |
CUHS20F60,H3FDIODE SCHOTTKY 60V 2A US2H Toshiba Semiconductor and Storage |
5,135 |
|
![]() Datasheet |
![]() |
- | 2-SMD, Flat Leads | Tape & Reel (TR) | Active | Schottky | 60 V | 2A | 590 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 70 µA @ 60 V | 300pF @ 0V, 1MHz | - | - | Surface Mount | US2H | 150°C |
![]() |
CMH07(TE12L,Q,M)DIODE GEN PURP 200V 2A M-FLAT Toshiba Semiconductor and Storage |
3,260 |
|
![]() Datasheet |
![]() |
- | SOD-128 | Tape & Reel (TR) | Active | Standard | 200 V | 2A | 980 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 10 µA @ 200 V | - | - | - | Surface Mount | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
![]() |
CRS20I40A(TE85L,QMDIODE SCHOTTKY 40V 2A S-FLAT Toshiba Semiconductor and Storage |
5,326 |
|
![]() Datasheet |
![]() |
- | SOD-123F | Tape & Reel (TR) | Active | Schottky | 40 V | 2A | 600 mV @ 2 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 60 µA @ 40 V | 35pF @ 10V, 1MHz | - | - | Surface Mount | S-FLAT (1.6x3.5) | 150°C (Max) |
![]() |
TRS12A65F,S1QDIODE SIL CARB 650V 12A TO220F Toshiba Semiconductor and Storage |
5,069 |
|
![]() Datasheet |
![]() |
- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.6 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 44pF @ 650V, 1MHz | - | - | Through Hole | TO-220F-2L | 175°C (Max) |
![]() |
1SS401(TE85L,F)DIODE SCHOTTKY 20V 300MA SC70 Toshiba Semiconductor and Storage |
4,069 |
|
![]() Datasheet |
![]() |
- | SC-70, SOT-323 | Tape & Reel (TR) | Active | Schottky | 20 V | 300mA | 450 mV @ 300 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 20 V | 46pF @ 0V, 1MHz | - | - | Surface Mount | SC-70 | 125°C (Max) |