Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
CRG07(TE85L,Q,M)DIODE GEN PURP 400V 700MA S-FLAT Toshiba Semiconductor and Storage |
4,826 |
|
![]() Datasheet |
![]() |
- | SOD-123F | Tape & Reel (TR) | Active | Standard | 400 V | 700mA | 1.1 V @ 700 mA | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 400 V | - | - | - | Surface Mount | S-FLAT (1.6x3.5) | 175°C (Max) |
![]() |
TRS10E65H,S1QG3 SIC-SBD 650V 10A TO-220-2L Toshiba Semiconductor and Storage |
4,078 |
|
![]() Datasheet |
![]() |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.35 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 649pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
![]() |
TRS10H120H,S1Q1200V 3RDGEN SIC-SBD 10A TO-247- Toshiba Semiconductor and Storage |
5,107 |
|
![]() Datasheet |
![]() |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 38A | 1.45 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 1200 V | 1148pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2L | 175°C |
![]() |
TRS15H120H,S1Q1200V 3RDGEN SIC-SBD 15A TO-247- Toshiba Semiconductor and Storage |
5,961 |
|
![]() Datasheet |
![]() |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 50A | 1.45 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 1673pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2L | 175°C |
![]() |
TRS20H120H,S1Q1200V 3RDGEN SIC-SBD 20A TO-247- Toshiba Semiconductor and Storage |
5,193 |
|
![]() Datasheet |
![]() |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 61A | 1.45 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 130 µA @ 1200 V | 2070pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2L | 175°C |
![]() |
CUS520,H3FDIODE SCHOTTKY 30V 200MA USC Toshiba Semiconductor and Storage |
4,701 |
|
![]() Datasheet |
![]() |
- | SC-76, SOD-323 | Tape & Reel (TR) | Active | Schottky | 30 V | 200mA | 280 mV @ 10 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 µA @ 30 V | 17pF @ 0V, 1MHz | - | - | Surface Mount | USC | 125°C (Max) |
![]() |
BAS316,H3FDIODE GEN PURP 100V 250MA USC Toshiba Semiconductor and Storage |
4,960 |
|
![]() Datasheet |
![]() |
- | SC-76, SOD-323 | Tape & Reel (TR) | Active | Standard | 100 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 3 ns | 200 nA @ 80 V | 0.35pF @ 0V, 1MHz | - | - | Surface Mount | USC | 150°C (Max) |
![]() |
CUS357,H3FDIODE SCHOTTKY 40V 100MA USC Toshiba Semiconductor and Storage |
5,981 |
|
![]() Datasheet |
![]() |
- | SC-76, SOD-323 | Tape & Reel (TR) | Active | Schottky | 40 V | 100mA | 600 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | - | 5 µA @ 40 V | 11pF @ 0V, 1MHz | - | - | Surface Mount | USC | 125°C (Max) |
![]() |
JDH2S02SL,L3FDIODE SCHOTTKY 10V 10MA SL2 Toshiba Semiconductor and Storage |
3,635 |
|
![]() Datasheet |
![]() |
- | 2-SMD, No Lead | Tape & Reel (TR) | Active | Schottky | 10 V | 10mA | - | Small Signal =< 200mA (Io), Any Speed | - | 25 µA @ 500 mV | 0.25pF @ 200mV, 1MHz | - | - | Surface Mount | SL2 | 125°C (Max) |
![]() |
TRS2E65F,S1QDIODE SIL CARB 650V 2A TO220-2L Toshiba Semiconductor and Storage |
4,948 |
|
![]() Datasheet |
![]() |
- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 2A | 1.6 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 8.7pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |