Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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TRS4E65H,S1QG3 SIC-SBD 650V 4A TO-220-2L Toshiba Semiconductor and Storage |
4,558 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.35 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 55 µA @ 650 V | 263pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
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TRS6V65H,LQG3 SIC-SBD 650V 6A DFN8X8 Toshiba Semiconductor and Storage |
4,689 |
|
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- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.35 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 392pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
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TRS6E65H,S1QG3 SIC-SBD 650V 6A TO-220-2L Toshiba Semiconductor and Storage |
4,477 |
|
![]() Datasheet |
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.35 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 392pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
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TRS8E65H,S1QG3 SIC-SBD 650V 8A TO-220-2L Toshiba Semiconductor and Storage |
3,077 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.35 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 520pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
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TRS10V65H,LQG3 SIC-SBD 650V 10A DFN8X8 Toshiba Semiconductor and Storage |
5,949 |
|
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- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.35 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 649pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
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TRS12V65H,LQG3 SIC-SBD 650V 12A DFN8X8 Toshiba Semiconductor and Storage |
4,750 |
|
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- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 778pF @ 1V, 1MHz | - | - | Surface Mount | 4-DFN-EP (8x8) | 175°C |
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TRS12E65H,S1QG3 SIC-SBD 650V 12A TO-220-2L Toshiba Semiconductor and Storage |
4,690 |
|
![]() Datasheet |
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.35 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 778pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C |
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CBS10S40,L3FDIODE SCHOTTKY 40V 1A CST2B Toshiba Semiconductor and Storage |
5,676 |
|
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- | 2-SMD, No Lead | Tape & Reel (TR) | Obsolete | Schottky | 40 V | 1A | 550 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150 µA @ 40 V | 120pF @ 0V, 1MHz | - | - | Surface Mount | CST2B | 125°C (Max) |
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CBS10S30,L3FDIODE SCHOTTKY 20V 1A CST2B Toshiba Semiconductor and Storage |
3,226 |
|
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- | 2-SMD, No Lead | Tape & Reel (TR) | Obsolete | Schottky | 20 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | 135pF @ 0V, 1MHz | - | - | Surface Mount | CST2B | 125°C (Max) |
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CCS15S30,L3FDIODE SCHOTTKY 20V 1.5A CST2C Toshiba Semiconductor and Storage |
4,753 |
|
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- | 2-SMD, No Lead | Tape & Reel (TR) | Active | Schottky | 20 V | 1.5A | 400 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500 µA @ 30 V | 200pF @ 0V, 1MHz | - | - | Surface Mount | CST2C | 125°C (Max) |