Photo | Mfr. Part # | Availability | Quantity | Datasheet | RoHs | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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1SS196(TE85L,F)DIODE GEN PURP 80V 100MA SC59-3 Toshiba Semiconductor and Storage |
3,816 |
|
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- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | Standard | 80 V | 100mA | 1.2 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 4 ns | 500 nA @ 80 V | 3pF @ 0V, 1MHz | - | - | Surface Mount | SC-59-3 | 125°C (Max) |
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1SS397TE85LFDIODE GEN PURP 400V 100MA SC70 Toshiba Semiconductor and Storage |
5,021 |
|
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- | SC-70, SOT-323 | Tape & Reel (TR) | Active | Standard | 400 V | 100mA | 1.3 V @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 500 ns | 1 µA @ 400 V | 5pF @ 0V, 1MHz | - | - | Surface Mount | SC-70 | 125°C (Max) |
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CMF04(TE12L,Q,M)DIODE GEN PURP 800V 500MA M-FLAT Toshiba Semiconductor and Storage |
5,789 |
|
- |
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- | SOD-128 | Tape & Reel (TR) | Active | Standard | 800 V | 500mA | 2.5 V @ 500 mA | Fast Recovery =< 500ns, > 200mA (Io) | 100 ns | 50 µA @ 800 V | - | - | - | Surface Mount | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
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TRS3E65F,S1QDIODE SIL CARB 650V 3A TO220-2L Toshiba Semiconductor and Storage |
4,838 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 3A | 1.6 V @ 3 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 12pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |
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TRS4E65F,S1QDIODE SIL CARB 650V 4A TO220-2L Toshiba Semiconductor and Storage |
4,891 |
|
![]() Datasheet |
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.6 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 16pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |
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TRS8E65F,S1QDIODE SIL CARB 650V 8A TO220-2L Toshiba Semiconductor and Storage |
3,481 |
|
![]() Datasheet |
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.6 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 28pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |
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TRS10E65F,S1QDIODE SIL CARB 650V 10A TO220-2L Toshiba Semiconductor and Storage |
4,005 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 36pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |
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TRS10A65F,S1QDIODE SIL CARB 650V 10A TO220F Toshiba Semiconductor and Storage |
3,187 |
|
![]() Datasheet |
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- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 36pF @ 650V, 1MHz | - | - | Through Hole | TO-220F-2L | 175°C (Max) |
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TRS4A65F,S1QDIODE SIL CARBIDE 650V 4A TO220F Toshiba Semiconductor and Storage |
4,033 |
|
![]() Datasheet |
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- | TO-220-2 Full Pack | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.6 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 16pF @ 650V, 1MHz | - | - | Through Hole | TO-220F-2L | 175°C (Max) |
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TRS12E65F,S1QDIODE SIL CARB 650V 12A TO220-2L Toshiba Semiconductor and Storage |
5,411 |
|
- |
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 65pF @ 650V, 1MHz | - | - | Through Hole | TO-220-2L | 175°C (Max) |